© 2018 IXYS CORPORATION, All Rights Reserved
IXTA100N04T2
IXTP100N04T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
20 30 40 50 60 70 80 90 100
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25
o
C
T
J
= 125
o
C
R
G
= 5Ω , V
GS
= 10V
V
DS
= 20V
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
9
10
11
12
13
14
15
16
t
d(on)
- Nanoseconds
I
D
= 50A, 100A
t
f
t
d(off)
T
J
= 125
o
C, V
GS
= 10V
V
DS
= 20V
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
3
5
7
9
11
13
15
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
11
13
15
17
19
21
23
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 5Ω, V
GS
= 10V
V
DS
= 20V
I
D
= 100A
I
D
= 100A
I
D
= 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
2
4
6
8
10
12
14
16
18
20
20 30 40 50 60 70 80 90 100
I
D
- Amperes
t
f
- Nanoseconds
10
12
14
16
18
20
22
24
26
28
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 5Ω, V
GS
= 10V
V
DS
= 20V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5Ω , V
GS
= 10V
V
DS
= 20V
I
D
= 50A
I
D
= 100A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
10
20
30
40
50
60
70
80
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
0
10
20
30
40
50
60
70
80
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 125
o
C, V
GS
= 10V
V
DS
= 20V
I
D
= 100A
I
D
= 50A
