74AUP1T1326_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 January 2009 19 of 24
NXP Semiconductors
74AUP1T1326
Low-power dual supply buffer/line driver; 3-state
13. Transfer characteristics
14. Waveforms transfer characteristics
Table 11. Transfer characteristics
Voltages are referenced to GND (ground=0V; for test circuit see Figure 5.
Symbol Parameter Conditions 25 °C −40 °C to +85 °C Unit
Min Typ Max Min Max
V
T+
positive-going
threshold voltage
nOE inputs; see Figure 6 and
Figure 7
V
CC(A)
= 1.1 V 0.53 - 0.90 0.53 0.90 V
V
CC(A)
= 1.4 V 0.74 - 1.11 0.74 1.11 V
V
CC(A)
= 1.65 V 0.91 - 1.29 0.91 1.29 V
V
CC(A)
= 2.3 V 1.37 - 1.77 1.37 1.77 V
V
CC(A)
= 3.0 V 1.88 - 2.29 1.88 2.29 V
V
T−
negative-going
threshold voltage
nOE inputs; see Figure 6 and
Figure 7
V
CC(A)
= 1.1 V 0.26 - 0.65 0.26 0.65 V
V
CC(A)
= 1.4 V 0.39 - 0.75 0.39 0.75 V
V
CC(A)
= 1.65 V 0.47 - 0.84 0.47 0.84 V
V
CC(A)
= 2.3 V 0.69 - 1.04 0.69 1.04 V
V
CC(A)
= 3.0 V 0.88 - 1.24 0.88 1.24 V
V
H
hysteresis voltage nOE inputs; (V
T+
− V
T−
); see
Figure 6, Figure 7, Figure 8
and
Figure 9
V
CC(A)
= 1.1 V 0.08 - 0.46 0.08 0.46 V
V
CC(A)
= 1.4 V 0.18 - 0.56 0.18 0.56 V
V
CC(A)
= 1.65 V 0.27 - 0.66 0.27 0.66 V
V
CC(A)
= 2.3 V 0.53 - 0.92 0.53 0.92 V
V
CC(A)
= 3.0 V 0.79 - 1.31 0.79 1.31 V
V
T+
and V
T−
limits at 70 % and 20 %.
Fig 6. Transfer characteristic Fig 7. Definition of V
T+
, V
T−
and V
H
mna207
V
O
V
I
V
H
V
T+
V
T−
mna208
V
O
V
I
V
H
V
T+
V
T−
