MT18HTF12872PDY-40ED2

PDF: 09005aef80e935cd/Source: 09005aef80e934a6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
13 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Register and PLL Specifications
Notes: 1. PLL timing and switching specifications are critical for proper operation of the DDR2 DIMM.
This is a subset of parameters for the specific PLL used. Detailed PLL information is available
in JEDEC standard JESD82.
Table 15: PLL Specifications
CU877 device or equivalent JESD82-8.01
Parameter Symbol Pins Condition Min Max Units
DC high-level input voltage
V
IH RESET# LVCMOS 0.65 × VDD –V
DC low-level input voltage
V
IL RESET# LVCMOS 0.35 × VDD V
Input voltage (limits)
V
IN RESET#, CK, CK# –0.3 VDDQ + 0.3 V
DC high-level input voltage
V
IH CK, CK# Differential input 0.65 × VDD –V
DC low-level input voltage
V
IL CK, CK# Differential input 0.35 × VDD V
Input differential-pair cross
voltage
V
IX CK, CK# Differential input (VDDQ/2) -
0.15
(VDDQ/2) +
0.15
V
Input differential voltage
V
ID(DC) CK, CK# Differential input 0.3 VDDQ + 0.4 V
Input differential voltage
V
ID(AC) CK, CK# Differential input 0.6 VDDQ + 0.4 V
Input current
I
I RESET# VI = VDDQ or VSSQ –10 10 µA
CK, CK# VI = VDDQ or VSSQ –250 250 µA
Output disabled current
I
ODL RESET# = VSSQ; VI = VIH(AC) or
VIL(DC)
100 µA
Static supply current
I
DDLD CK = CK# = LOW 500 µA
Dynamic supply
I
DD n/a CK, CK# = 270 MHz, all
outputs open
(not connected to PCB)
–300mA
Input capacitance
C
IN Each input VI = VDDQ or VSSQ23pF
Table 16: PLL Clock Driver Timing Requirements and Switching Characteristics
Parameter Symbol Min Max Units
Stabilization time
t
L–15µs
Input clock slew rate
t
LS
I
1.0 4 V/ns
SSC modulation frequency
30 33 kHz
SSC clock input frequency deviation
0.0 –0.50 %
PLL loop bandwidth (–3dB from unity gain)
2.0 MHz
PDF: 09005aef80e935cd/Source: 09005aef80e934a6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
14 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Serial Presence-Detect
Serial Presence-Detect
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
Table 17: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units
Supply voltage
V
DDSPD 1.7 3.6 V
Input high voltage: Logic 1; All inputs
V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs
V
IL –0.6 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA
V
OL –0.4V
Input leakage current: V
IN = GND to VDD
ILI 0.10 3 µA
Output leakage current: V
OUT = GND to VDD
ILO 0.05 3 µA
Standby current
I
SB 1.6 4 µA
Power supply current, READ: SCL clock frequency = 100 kHz
I
CC
R
0.4 1 mA
Power supply current, WRITE: SCL clock frequency = 100 kHz
I
CC
W
23mA
Table 18: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
SDA and SCL fall time
t
F–300ns2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SDA and SCL rise time
t
R–0.3µs2
SCL clock frequency
f
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
PDF: 09005aef80e935cd/Source: 09005aef80e934a6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
15 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Serial Presence-Detect
Table 19: Serial Presence-Detect Matrix
Byte Description Entry (Version) 512MB
1
1GB 2GB
0
Number of SPD bytes used by Micron
128 80 80 80
1
Total number of bytes in SPD device
256 08 08 08
2
Fundamental memory type
DDR2 SDRAM080808
3
Number of row addresses on SDRAM
13, 14 0D 0E 0E
4
Number of column addresses on SDRAM
10 0A 0A 0A
5
DIMM height and module ranks
30mm, dual rank 61 61 61
6
Module data width
72 48 48 48
7
Reserved
0 000000
8
Module voltage interface levels
SSTL 1.8V 05 05 05
9
SDRAM cycle time,
t
CK
(CL = MAX value, see byte 18)
-80E
-800
-667
-53E
-40E
30
3D
50
25
25
30
3D
50
25
25
30
3D
50
10
SDRAM access from clock,
t
AC
(CL = MAX value, see byte 18)
-80E/-800
-667
-53E
-40E
45
50
60
40
45
50
60
40
45
50
60
11
Module configuration type
ECC
ECC and parity (P)
02
06
02
06
02
06
12
Refresh rate/type
7.81µs/SELF 82 82 82
13
SDRAM device width (primary SDRAM)
8 080808
14
Error-checking SDRAM data width
8 080808
15
Reserved
000000
16
Burst lengths supported
4, 8 0C0C0C
17
Number of banks on SDRAM device
4 or 8040408
18
CAS latencies supported
-80E (5, 4)
-800 (6, 5, 4)
-667 (5, 4, 3)
-53E/-40E (4, 3)
38
18
30
70
38
18
30
70
38
18
19
Module thickness
010101
20
DDR2 DIMM type
Registered DIMM 01 01 01
21
SDRAM module attributes
1 PLL, 2 reg 05 05 05
22
SDRAM device attributes: weak driver (01),
or weak driver and 50Ω ODT (03)
-80E/-800/-667
-53E/-40E
–/–/03
01
03
01
03
01
23
SDRAM cycle time,
t
CK, MAX CL - 1
-80E/-667
-800
-53E/-40E
–/3D
50
3D
30
50
3D
30
50
24
SDRAM access from CK,
t
AC, MAX CL - 1
-80E/-800
-667
-53E
-40E
45
50
60
40
45
50
60
40
45
50
60
25
SDRAM cycle time,
t
CK, MAX CL - 2
-80E/-800
-667
-53E/-40E
50
00
00/3D
50
00
00/3D
50
00
26
SDRAM access from CK,
t
AC, MAX CL - 2
-80E/-800
-667
-53E/-40E
45
00
00/40
45
00
00/40
45
00

MT18HTF12872PDY-40ED2

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 1GB 240RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union