PDF: 09005aef80e935cd/Source: 09005aef80e934a6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
16 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Serial Presence-Detect
27
MIN row precharge time,
t
RP
-80E
-800/-667
-53E/-40E
– /3C
3C
32
3C
3C
32
3C
3C
28
MIN row active-to-row active,
t
RRD
1E 1E 1E
29
MIN RAS#-to-CAS# delay,
t
RCD
-80E
-800/-667
-53E/-40E
– /3C
3C
32
3C
3C
32
3C
3C
30
MIN active-to-precharge time,
t
RAS
-80E-800
-667/-53E
-40E
– /2D
2D
28
2D
2D
28
2D
2D
28
31
Module rank density
256MB, 512MB,
1GB
40 80 01
32
Address and command setup time,
t
IS
b
-80E/-800
-667
-53E
-40E
20
25
35
17
20
25
35
17
20
25
35
33
Address and command hold time,
t
IH
b
-80E/-800
-667
-53E
-40E
27
37
47
25
27
37
47
25
27
37
47
34
Data/data mask input setup time,
t
DS
b
-80E/-800
-667/-53E
-40E
10
15
05
10
15
05
10
15
35
Data/data mask input hold time,
t
DH
b
-80E/-800
-667
-53E
-40E
17
22
27
12
17
22
27
12
17
22
27
36
Write recovery time,
t
WR
3C 3C 3C
37
WRITE-to-READ command delay,
t
WTR
-80E/-667/-53E
-800/-40E
–/1E/1E
–/28
1E
28
1E
28
38
READ-to-PRECHARGE command delay,
t
RTP
1E 1E 1E
39
Memory analysis probe
00 00 00
40
Extension for bytes 41 and 42
-80E
-800/-667
-53E/-40E
00
00
30
00
00
36
06
06
41
MIN active-to-active/refresh time,
t
RC
2
-80E
-800/-667/-53E
-40E
3C
37
39
3C
37
39
3C
37
42
MIN AUTO REFRESH-to-ACTIVE/AUTO
REFRESH command period,
t
RFC
4B 69 7F
43
SDRAM device MAX cycle time,
t
CK (MAX)
80 80 80
44
SDRAM device MAX DQS–DQ skew time,
t
DQSQ
-80E/-800
-667
-53E
-40E
18
1E
23
14
18
1E
23
14
18
1E
23
45
SDRAM device MAX read data hold skew
factor,
t
QHS
-80E/-800
-667
-53E
-40E
22
28
2D
1E
22
28
2D
1E
22
28
2D
46
PLL relock time
15µs 0F 0F 0F
Table 19: Serial Presence-Detect Matrix (continued)
Byte Description Entry (Version) 512MB
1
1GB 2GB
PDF: 09005aef80e935cd/Source: 09005aef80e934a6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
17 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Serial Presence-Detect
Notes: 1. The 512MB module is not available in -80E or -800 speed grades.
2. The
t
RC SPD values shown are JEDEC DDR2 device specification values. The actual Micron
DDR2 device specification is
t
RC = 55ns for all speed grades.
47–61
Optional features, not supported
00 00 00
62
SPD revision
Release 1.2 12 12 12
63
Checksum for bytes 0–62 ECC/ECC and parity
-80E
-800
-667
-53E
-40E
12/16
BD/C1
24/28
B5/B9
56/5A
71/75
1C/20
83/89
56/5A
F7/FB
12/16
BD/C1
24/28
64
Manufacturer’s JEDEC ID code
MICRON 2C 2C 2C
65–71
Manufacturer’s JEDEC ID code
(continued) FF FF FF
72
Manufacturing location
1–12 01–0C 01–0C 01–0C
73–90
Module part number (ASCII)
Variable data Variable data Variable data
91
PCB identification code
1–9 01–09 01–09 01–09
92
Identification code (continued)
0 000000
93
Year of manufacture in BCD
Variable data Variable data Variable data
94
Week of manufacture in BCD
Variable data Variable data Variable data
95–98
Module serial number
Variable data Variable data Variable data
99–127
Reserved for manufacturer-specific data
00 00 00
128–255
Reserved for customer-specific data
FF FF FF
Table 19: Serial Presence-Detect Matrix (continued)
Byte Description Entry (Version) 512MB
1
1GB 2GB
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of
their respective owners.
This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range
for production devices. Although considered final, these specifications are subject to change, as further product
development and data characterization sometimes occur.
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Module Dimensions
PDF: 09005aef80e935cd/Source: 09005aef80e934a6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
18 ©2003 Micron Technology, Inc. All rights reserved.
Module Dimensions
Figure 3: 240-Pin DDR2 DIMM
Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for com-
plete design dimensions.
30.50 (1.20)
29.85 (1.175)
PIN 1
17.78 (0.700)
TYP
2.50 (0.098) D
(2X)
2.30 (0.091) TYP
5.0 (0.197) TYP
4.840 (123.0)
TYP
1.0 (0.039)
TYP
0.80 (0.031)
TYP
2.00 (0.079) R
(4X)
0.75 (0.030) R
PIN 120
FRONT VIEW
63.0 (2.48)
TYP
55.0 (2.165)
TYP
10.00 (0.394)
TYP
BACK VIEW
PIN 240
PIN 121
1.37 (0.054)
1.17 (0.046)
4.0 (0.157)
MAX
U1
U2 U3 U4 U5
U6
U7
U8
U9 U10 U11 U12
U22 U21 U20 U19 U18
U17
U16 U15 U14 U13
133.50 (5.256)
133.20 (5.244)
2.21 (0.087) TYP
1.0 (0.039) TYP
3.05 (0.120) TYP

MT18HTF6472DY-53EB2

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 512MB 240RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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