SQM40031EL
www.vishay.com
Vishay Siliconix
S17-0071-Rev. A, 23-Jan-17
2
Document Number: 70297
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -40 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 -2.0 -2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= -40 V - - -1
μA V
GS
= 0 V V
DS
= -40 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -40 V, T
J
= 175 °C - - -450
On-State Drain Current
a
I
D(on)
V
GS
= -10 V V
DS
-5 V -100 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -30 A - 0.00250 0.00300
V
GS
= -10 V I
D
= -30 A, T
J
= 125 °C - - 0.00440
V
GS
= -10 V I
D
= -30 A, T
J
= 175 °C - - 0.00520
V
GS
= -4.5 V I
D
= -25 A - 0.00316 0.00380
Forward Transconductance
b
g
fs
V
DS
= -15 V, I
D
= -25 A - 123 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= -25 V, f = 1 MHz
- 30 000 39 000
pF Output Capacitance C
oss
- 1850 2500
Reverse Transfer Capacitance C
rss
- 1550 2100
Total Gate Charge
c
Q
g
V
GS
= -10 V V
DS
= -20 V, I
D
= -80 A
- 527 800
nC Gate-Source Charge
c
Q
gs
-89-
Gate-Drain Charge
c
Q
gd
- 100 -
Gate Resistance R
g
f = 1 MHz 1 2.26 3.5
Turn-On Delay Time
c
t
d(on)
V
DD
= -20 V, R
L
= 0.3
I
D
-80 A, V
GEN
= -10 V, R
g
= 1
-2135
ns
Rise Time
c
t
r
-3050
Turn-Off Delay Time
c
t
d(off)
- 250 400
Fall Time
c
t
f
- 165 300
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
---300A
Forward Voltage V
SD
I
F
= -80 A, V
GS
= 0 V - -0.85 -1.5 V
Body diode reverse recovery time t
rr
I
F
= -50 A, di/dt = 100 A/μs
- 70 140 ns
Body diode reverse recovery charge Q
rr
- 134 270 nC
Reverse recovery fall time t
a
-43-
ns
Reverse recovery rise time t
b
-35-
Body diode peak reverse recovery
current
I
RM(REC)
--4-8A
