SQM40031EL_GE3

SQM40031EL_GE3
Mfr. #:
SQM40031EL_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P Ch -40V Vds AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Datasheet:
SQM40031EL_GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQM40031EL_GE3 DatasheetSQM40031EL_GE3 Datasheet (P4-P6)
ECAD Model:
More Information:
SQM40031EL_GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
120 A
Rds On - Drain-Source Resistance:
2.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
800 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
375 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
TrenchFET
Packaging:
Reel
Height:
4.83 mm
Length:
10.67 mm
Series:
SQ
Transistor Type:
1 P-Channel
Width:
9.65 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
123 S
Fall Time:
165 ns
Product Type:
MOSFET
Rise Time:
30 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
250 ns
Typical Turn-On Delay Time:
21 ns
Unit Weight:
0.077603 oz
Tags
SQM400, SQM40, SQM4, SQM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 40V 120A Automotive 3-Pin(2+Tab) TO-263
***et Europe
MOSFET P-Channel Automotive 40V 120A 3-Pin TO-263
***i-Key
MOSFET P-CH 40V 120A D2PAK
***ronik
P-CH 40V 120A 2,5mOhm TO263
***ark
Mosfet, Aec-Q101, P-Ch, -40V, To-263; Transistor Polarity:p Channel; Continuous Drain Current Id:-120A; Drain Source Voltage Vds:-40V; On Resistance Rds(On):0.0025Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, P-CH, -40V, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-120A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:375W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, AEC-Q101, CA-P, -40V, TO-263; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-120A; Tensione Drain Source Vds:-40V; Resistenza di Attivazione Rds(on):0.0025ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-2V; Dissipazione di Potenza Pd:375W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Part # Mfg. Description Stock Price
SQM40031EL_GE3
DISTI # V36:1790_17600394
Vishay IntertechnologiesSQM40031EL_GE3
9172
3106908
0
  • 800000:$1.3010
  • 400000:$1.3030
  • 80000:$1.4570
  • 8000:$1.7110
  • 800:$1.7530
SQM40031EL_GE3
DISTI # V72:2272_17600394
Vishay IntertechnologiesSQM40031EL_GE3
9172
3106908
0
    SQM40031EL_GE3
    DISTI # SQM40031EL_GE3TR-ND
    Vishay SiliconixMOSFET P-CH 40V 120A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)
    On Order
    • 5600:$1.3022
    • 2400:$1.3523
    • 1600:$1.4525
    • 800:$1.7530
    SQM40031EL_GE3
    DISTI # SQM40031EL_GE3CT-ND
    Vishay SiliconixMOSFET P-CH 40V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 100:$2.1976
    • 10:$2.7340
    • 1:$3.0400
    SQM40031EL_GE3
    DISTI # SQM40031EL_GE3DKR-ND
    Vishay SiliconixMOSFET P-CH 40V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 100:$2.1976
    • 10:$2.7340
    • 1:$3.0400
    SQM40031EL_GE3
    DISTI # SQM40031EL_GE3
    Vishay IntertechnologiesMOSFET P-Channel Automotive 40V 120A 3-Pin TO-263 - Tape and Reel (Alt: SQM40031EL_GE3)
    RoHS: Not Compliant
    Min Qty: 800
    Container: Reel
    Americas - 0
    • 3200:$1.1900
    • 4800:$1.1900
    • 8000:$1.1900
    • 800:$1.2900
    • 1600:$1.2900
    SQM40031EL_GE3
    DISTI # SQM40031EL_GE3
    Vishay IntertechnologiesTransistor MOSFET P-CH 40V 120A 3-Pin TO-263 (Alt: SQM40031EL_GE3)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 500:€1.3900
    • 1000:€1.3900
    • 50:€1.4900
    • 100:€1.4900
    • 25:€1.5900
    • 10:€1.9900
    • 1:€2.5900
    SQM40031EL_GE3
    DISTI # 10AC9140
    Vishay IntertechnologiesMOSFET, AEC-Q101, P-CH, -40V, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-120A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2V,Power RoHS Compliant: Yes5230
    • 500:$1.7800
    • 100:$2.0400
    • 50:$2.1900
    • 25:$2.3400
    • 10:$2.4800
    • 1:$2.9900
    SQM40031EL_GE3
    DISTI # 78-SQM40031EL_GE3
    Vishay IntertechnologiesMOSFET P Ch -40V Vds AEC-Q101 Qualified
    RoHS: Compliant
    0
    • 1:$2.9600
    • 10:$2.4600
    • 100:$2.0200
    • 250:$1.9600
    • 500:$1.7600
    • 800:$1.4800
    • 2400:$1.4100
    • 4800:$1.3500
    SQM40031EL_GE3
    DISTI # 2708324
    Vishay IntertechnologiesMOSFET, AEC-Q101, P-CH, -40V, TO-263
    RoHS: Compliant
    5200
    • 100:$3.3200
    • 10:$4.1200
    • 1:$4.5800
    SQM40031EL_GE3
    DISTI # 2708324
    Vishay IntertechnologiesMOSFET, AEC-Q101, P-CH, -40V, TO-2635159
    • 500:£1.3700
    • 250:£1.5200
    • 100:£1.5700
    • 10:£1.9200
    • 1:£2.5900
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    Availability
    Stock:
    Available
    On Order:
    1500
    Enter Quantity:
    Current price of SQM40031EL_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.96
    $2.96
    10
    $2.46
    $24.60
    100
    $1.90
    $190.00
    500
    $1.66
    $830.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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