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BC857CM,315

P1-P3P4-P6P7-P9P10-P11
2004 Mar 10 3
NXP Semiconductors Product data sheet
PNP general purpose transistors BC857M series
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −50 V
V
CEO
collector-emitter voltage open base − −45 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −100 mA
I
CM
peak collector current − −200 mA
I
BM
peak base current − −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
note 1 − 250 mW
note 2 − 430 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air
note 1 500 K/W
note 2 290 K/W
2004 Mar 10 4
NXP Semiconductors Product data sheet
PNP general purpose transistors BC857M series
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
= 0 − −15 nA
V
CB
= −30 V; I
E
= 0; T
j
= 150 °C − −5 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − −100 nA
h
FE
DC current gain V
CE
= −5 V; I
C
= −2 mA
BC857AM 125 250
BC857BM 220 475
BC857CM 420 800
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5 V −600 −750 mV
I
C
= −10 mA; V
CE
= −5 V − −820 mV
V
CEsat
collector-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA − −200 mV
I
C
= −100 mA; I
B
= −5 mA; note 1 − −400 mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= −10 V; f = 1 MHz − 2.5 pF
f
T
transition frequency V
CE
= −5 V; I
C
= −10 mA;
f
= 100 MHz
100 − MHz
F noise figure I
C
= −200 μA; V
CE
= −5 V;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
− 10 dB
2004 Mar 10 5
NXP Semiconductors Product data sheet
PNP general purpose transistors BC857M series
GRAPHICAL INFORMATION BC857AM
handbook, halfpage
0
500
100
200
300
400
MLE188
−10
−2
−10
−1
(1)
−1
I
C
(mA)
h
FE
−10 −10
2
−10
3
(2)
(3)
Fig.2 DC current gain; typical values.
V
CE
= −5 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
−200
−1200
−400
−600
−800
−1000
MLE189
−10
−2
−10
−1
(1)
−1
I
C
(mA)
V
BE
(mV)
−10 −10
2
−10
3
(3)
(2)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
V
CE
= −5 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
handbook, halfpage
−10
4
−10
3
−10
2
−10
MLE190
−10
−1
−1 −10
I
C
(mA)
V
CEsat
(mV)
−10
2
−10
3
(1)
(2)
(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
−200
−1200
−400
−600
−800
−1000
MLE191
−1−10
−1
I
C
(mA)
V
BEsat
(mV)
−10 −10
2
−10
3
(1)
(3)
(2)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
P1-P3P4-P6P7-P9P10-P11

BC857CM,315

Mfr. #:
Buy BC857CM,315
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PNP GP 45V 100mA
Lifecycle:
New from this manufacturer.
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