TSM900N10CP ROG

TSM900N10
Taiwan Semiconductor
Document Number: DS_P0000173 4 Version: A15
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Continuous Drain Current vs. T
C
Gate Charge
On-Resistance vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance Curve
V
GS
,
Gate to Source Voltage (V)
Qg, Gate Charge (nC)
I
D
, Continuous Drain Current (A)
T
C
, Case Temperature (°C)
Normalized Gate Threshold Voltage (V)
T
J
, Junction Temperature (°C)
Normalized On Resistance (m)
T
J
, Junction Temperature (°C)
I
D
,
Continuous Drain Current (A)
V
DS
, Drain to Source Voltage (V)
Normalized Thermal Response (R
θJC
)
Square Wave Pulse Duration
(s)
TSM900N10
Taiwan Semiconductor
Document Number: DS_P0000173 5 Version: A15
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-251S (IPAK SL)
MARKING DIAGRAM
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
`
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code (1~9, A~Z)
TSM900N10
Taiwan Semiconductor
Document Number: DS_P0000173 6 Version: A15
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-252 (DPAK)
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
`
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code (1~9, A~Z)

TSM900N10CP ROG

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 100V, 15A, Single N-Channel Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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