LTC4449
3
4449fa
The l denotes the specifi cations which apply over the full operating junction
temperature range, otherwise specifi cations are at T
A
= 25°C. V
CC
= V
LOGIC
= V
BOOST
= 5V, V
TS
= GND = 0V, unless otherwise noted. (Note 2)
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4449 is tested under pulsed load conditions such that
T
J
≈ T
A
. The LTC4449E is guaranteed to meet specifi cations from
0°C to 85°C junction temperature. Specifi cations over the –40°C to
125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC4449I is guaranteed over the –40°C to 125°C operating junction
temperature range. Note that the maximum ambient temperature
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Input Signal (IN)
V
IH(TG)
TG Turn-On Input Threshold V
LOGIC
≥ 5V, IN Rising
V
LOGIC
= 3.3V, IN Rising
l
l
3
1.9
3.5
2.2
4
2.6
V
V
V
IL(TG)
TG Turn-Off Input Threshold V
LOGIC
≥ 5V, IN Falling
V
LOGIC
= 3.3V, IN Falling
l
l
2.75
1.8
3.25
2.09
3.75
2.5
V
V
V
IH(BG)
BG Turn-On Input Threshold V
LOGIC
≥ 5V, IN Falling
V
LOGIC
= 3.3V, IN Falling
l
l
0.8
0.8
1.25
1.1
1.6
1.4
V
V
V
IL(BG)
BG Turn-Off Input Theshold V
LOGIC
≥ 5V, IN Rising
V
LOGIC
= 3.3V, IN Rising
l
l
1.05
0.9
1.5
1.21
1.85
1.5
V
V
I
IN(SD)
Maximum Current Into or Out of IN in
Shutdown Mode
V
LOGIC
≥ 5V, IN Floating
V
LOGIC
= 3.3V, IN Floating
150
75
300
150
µA
µA
High Side Gate Driver Output (TG)
V
OH(TG)
TG High Output Voltage I
TG
= –100mA, V
OH(TG)
= V
BOOST
– V
TG
140 mV
V
OL(TG)
TG Low Output Voltage I
TG
= 100mA, V
OL(TG)
= V
TG
– V
TS
80 mV
I
PU(TG)
TG Peak Pull-Up Current
l
2 3.2 A
I
PD(TG)
TG Peak Pull-Down Current
l
1.5 2.4 A
Low Side Gate Driver Output (BG)
V
OH(BG)
BG High Output Voltage I
BG
= –100mA, V
OH(BG)
= V
CC
– V
BG
100 mV
V
OL(BG)
BG Low Output Voltage I
BG
= 100mA 100 mV
I
PU(BG)
BG Peak Pull-Up Current
l
2 3.2 A
I
PD(BG)
BG Peak Pull-Down Current
l
3 4.5 A
Switching Time
t
PLH(TG)
BG Low to TG High Propagation Delay 14 ns
t
PHL(TG)
IN Low to TG Low Propagation Delay 13 ns
t
PLH(BG)
TG Low to BG High Propagation Delay 13 ns
t
PHL(BG)
IN High to BG Low Propagation Delay 11 ns
t
r(TG)
TG Output Rise Time 10% to 90%, C
L
= 3nF 8 ns
t
f(TG)
TG Output Fall Time 90% to 10%, C
L
= 3nF 7 ns
t
r(BG)
BG Output Rise Time 10% to 90%, C
L
= 3nF 7 ns
t
f(BG)
BG Output Fall Time 90% to 10%, C
L
= 3nF 4 ns
consistent with these specifi cations is determined by specifi c operating
conditions in conjunction with board layout, the rated package thermal
impedance, and other environmental factors. The junction temperature T
J
is calculated from the ambient temperature T
A
and power dissipation P
D
according to the following formula:
T
J
= T
A
+ (P
D
•
64°C/W)
Note 3: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specifi ed maximum operating junction
temperature may impair device reliability.
