VS-QA300FA17
www.vishay.com
Vishay Semiconductors
Revision: 07-Jun-2018
1
Document Number: 96194
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Gen 2 Schottky Rectifier Module, 300 A
FEATURES
• Max. T
J
= 175 °C
• Two fully independent diodes
• Fully insulated package
• Trench MOS Barrier Schottky technology
• Ultra low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-QA300FA17 insulated modules integrate two state
of the art Trench MOS Schottky technology rectifiers in the
compact, industry standard SOT-227 package.
These devices are thus intended for high frequency
converters and switching power supplies.
PRIMARY CHARACTERISTICS
I
F(AV)
per module at T
C
= 132 °C 300 A
V
R
170 V
V
FM
at 100 A, T
C
= 25 °C 0.79 V
Package SOT-227
Circuit configuration
Two separate diodes, parallel
pin-out
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
F
T
J
= 150 °C 0.69 V
T
J
Range -55 to +175 °C
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Average forward current per module I
F(AV)
T
C
= 132 °C 300 A
Cathode to anode voltage V
R
170 V
Continuous forward current per diode I
F
T
C
= 90 °C 330
A
Single pulse forward current per diode I
FSM
T
C
= 175 °C, t = 6 ms, square 1575
Maximum power dissipation per diode P
D
T
C
= 90 °C 327 W
Non-repetitive avalanche energy per diode E
AS
T
J
= 25 °C, I
AS
= 27 A, L = 10 mH 3700 mJ
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
