VS-QA300FA17
www.vishay.com
Vishay Semiconductors
Revision: 07-Jun-2018
5
Document Number: 96194
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Reverse Recovery Parameter Test Circuit
Fig. 11 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
1 - Vishay Semiconductors product
2 - Schottky technologies
3
- Present silicon generation
4 - Current rating (300 = 300 A)
5 - Circuit configuration (two separate diodes, parallel pin-out)
6 - Package indicator (SOT-227 standard insulated base)
- Voltage rating (17 = 170 V)
7
Device code
51 32 4 6 7
VS- Q A 300 F A 17
Quantity per tube is 10, M4 screw and washer included
