PEDR48V256A-06
Issue Date: Oct. 17, 2011
MR48V256A
32,768-Word 8-Bit FeRAM (Ferroelectric Random Access Memory)
1/12
GENERAL DESCRIPTION
The MR48V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed
in the ferroelectric process and silicon-gate CMOS technology. Unlike SRAMs, this device, whose cells are
nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and
programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle
time can be equal to the read cycle time and the power consumption during a write can be reduced significantly.
The MR48V256A can be used in various applications, because the device is guaranteed for the write/read
tolerance of 10
12
cycles per bit and the rewrite count can be extended significantly.
FEATURES
• 32,768-word 8-bit configuration
• A single 3.3 V 0.3 V power supply
• Read access time: 70 ns (Max.)
• Write enable time: 70 ns (Min.)
• Random read/write cycle time 150 ns (Min.)
• Read/write tolerance 10
12
cycles/bit
• Data retention 10 years
• Guaranteed operating temperature range 40 to 85C (Extended temperature version)
• Package options:
28-pin plastic TSOPI (TSOP(1)28-08134-0.55-ZK)
PRODUCT FAMILY
Access Time
Family
Relative to CE Relative to OE
Read/Write
Cycle Time
Package
MR48V256A 70ns 40ns 150ns 28pin TSOPI
