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74ABT543
Absolute Maximum Ratings(Note 1)
Recommended Operating
Conditions
Note 1: Absolute maximum ratings are values beyond which the device
may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Note 3: Guaranteed but not tested.
Note 4: For 8-bit toggling. I
CCD
< 1.4 mA/MHz.
Note 5: Guaranteed, but not tested.
Storage Temperature −65°C to +150°C
Ambient Temperature under Bias −55°C to +125°C
Junction Temperature under Bias −55°C to +150°C
V
CC
Pin Potential to
Ground Pin −0.5V to +7.0V
Input Voltage (Note 2) −0.5V to +7.0V
Input Current (Note 2) −30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disable or Power-Off State −0.5V to +5.5V
in the HIGH State −0.5V to V
CC
Current Applied to Output
in LOW State (Max)
twice the rated I
OL
(mA)
DC Latchup Source Current −500 mA
Over Voltage Latchup (I/O) 10V
Free Air Ambient Temperature −40°C to +85°C
Supply Voltage +4.5V to +5.5V
Minimum Input Edge Rate (∆V/∆t)
Data Input 50 mV/ns
Enable Input 20 mV/ns
Clock Input 100 mV/ns
Symbol Parameter Min Typ Max Units
V
CC
Conditions
V
IH
Input HIGH Voltage 2.0 V Recognized HIGH Signal
V
IL
Input LOW Voltage 0.8 V Recognized LOW Signal
V
CD
Input Clamp Diode Voltage −1.2 V I
IN
= −18 mA (Non I/O Pins)
V
OH
Output HIGH Voltage 2.5 I
OH
= −3 mA, (A
n
, B
n
)
2.0 I
OH
= −32 mA, (A
n
, B
n
)
V
OL
Output LOW Voltage 0.55 V Min I
OL
= 64 mA, (A
n
, B
n
)
V
ID
Input Leakage Test 4.75 V 0.0 I
ID
= 1.9 µA, (Non-I/O Pins)
All Other Pins Grounded
I
IH
Input HIGH Current 1 µAMaxV
IN
= 2.7V (Non-I/O Pins) (Note 3)
1V
IN
= V
CC
(Non-I/O Pins)
I
BVI
Input HIGH Current Breakdown Test 7 µAMaxV
IN
= 7.0V (Non-I/O Pins)
I
BVIT
Input HIGH Current 100 µAMaxV
IN
= 5.5V (A
n
, B
n
)
Breakdown Test (I/O)
I
IL
Input LOW Current −1 µAMaxV
IN
= 0.5V (Non-I/O Pins) (Note 3)
−1V
IN
= 0.0V (Non-I/O Pins)
I
IH
+ I
OZH
Output Leakage Current 10 µA 0V–5.5V V
OUT
= 2.7V (A
n
, B
n
);
OEAB or CEAB = 2V
I
IL
+ I
OZL
Output Leakage Current −10 µA 0V–5.5V V
OUT
= 0.5V (A
n
, B
n
);
OEAB or CEAB = 2V
I
OS
Output Short-Circuit Current −100 −275 mA Max V
OUT
= 0V (A
n
, B
n
)
I
CEX
Output HIGH Leakage Current 50 µAMaxV
OUT
= V
CC
(A
n
, B
n
)
I
ZZ
Bus Drainage Test 100 µA0.0VV
OUT
= 5.5V (A
n
, B
n
);
All Others GND
I
CCLH
Power Supply Current 50 µA Max All Outputs HIGH
I
CCL
Power Supply Current 30 mA Max All Outputs LOW
I
CCZ
Power Supply Current 50 µA Max Outputs 3-STATE
All Others at V
CC
or GND
I
CCT
Additional I
CC
/Input 2.5 mA Max V
I
= V
CC
− 2.1V
All Others at V
CC
or GND
I
CCD
Dynamic I
CC
No Load
Outputs Open, CEAB
(Note 5) 0.18 mA/MHz Max
and OEAB = GND, CEBA = V
CC
, One Bit Toggling,
50% Duty Cycle, (Note 4)
