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PHPT61006PYX
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
NXP Semiconductors
PHPT61006PY
100 V
, 6 A PNP high power bipolar transistor
PHPT61006PY
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
21 January 2015
9 / 16
I
C
(mA)
-10
-1
-10
4
-10
3
-1
-10
2
-10
aaa-015665
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(3)
(1)
(2)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10.
Collector-emitter saturation resistance as a
function of collector current; typical values
I
C
(mA)
-10
-1
-10
4
-10
3
-1
-10
2
-10
aaa-015666
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(3)
(2)
(1)
(4)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 20
(4) I
C
/I
B
= 10
Fig. 1
1.
Collector-emitter saturation resistance as a
function of collector current; typical values
NXP Semiconductors
PHPT61006PY
100 V
, 6 A PNP high power bipolar transistor
PHPT61006PY
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
21 January 2015
10 / 16
1
1.
T
est information
006aaa266
-
I
Bon
(100 %)
-
I
B
input pulse
(idealized waveform)
-
I
Boff
90 %
10 %
-
I
C
(100 %)
-
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
Fig. 12.
BISS transistor switching time definition
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig. 13.
T
est circuit for switching times
1
1.1
Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
NXP Semiconductors
PHPT61006PY
100 V
, 6 A PNP high power bipolar transistor
PHPT61006PY
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
21 January 2015
11 / 16
12.
Package outline
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
SOT669
MO-235
sot669_po
11-03-25
13-02-27
Unit
(1)
mm
max
nom
min
1.20
1.01
0.15
0.00
0.25
0.50
0.35
4.41
3.62
2.2
2.0
6.2
5.8
0.85
0.40
A
Dimensions (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Plastic single-ended surface-mounted package (LFP
AK56; Power-SO8); 4 leads
SOT669
A
1
A
2
1.10
0.95
A
3
b
b
2
b
3
0.1
L
2
w
y
8
°
0
°
θ
b
4
c
c
2
D
(1)
D
1
(1)
E
(1)
E
1
(1)
3.3
3.1
e
1.27
H
L
0.25
0.19
0.30
0.24
4.20
1.3
0.8
0.25
0.9
0.7
4.10
3.80
5.0
4.8
1.3
0.8
L
1
A
C
1/2 e
w
A
0
5 mm
scale
e
E
1
b
c
2
A
2
1
2
3
4
mounting
base
D
1
c
E
b
2
b
3
b
4
H
D
L
2
L
1
C
X
y
C
q
(A
3
)
L
A
A
1
detail X
Fig. 14.
Package outline LFP
AK56; Power-SO8 (SOT669)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
PHPT61006PYX
Mfr. #:
Buy PHPT61006PYX
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 100V 6A PNP high power bipolar
Lifecycle:
New from this manufacturer.
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