NXP Semiconductors
PHPT61006PY
100 V, 6 A PNP high power bipolar transistor
PHPT61006PY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 21 January 2015 3 / 16
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -100 V
V
CEO
collector-emitter voltage open base - -100 V
V
EBO
emitter-base voltage open collector - -8 V
I
C
collector current - -6 A
I
CM
peak collector current t
p
≤ 1 ms; single pulse - -12 A
I
B
base current - -1 A
I
BM
peak base current t
p
≤ 1 ms; pulsed - -2 A
[1] - 1.3 W
[2] - 3.3 W
[3] - 5 W
P
tot
total power dissipation T
amb
≤ 25 °C
[4] - 25 W
T
j
junction temperature - 175 °C
T
amb
ambient temperature -55 175 °C
T
stg
storage temperature -65 175 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 Printed-Circuit Board ( PCB), single-sided copper, tin-plated mounting pad for
collector 6 cm
2
.
[3] Device mounted on an ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[4] Power dissipation from junction to mounting base.
