IRF7805PbF
2 2016-8-23
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 300µs; duty cycle 2%.
When mounted on 1" in square copper board, t < 10 sec.
Typ = measured - Q
OSS
R
is measured at T
J
of approximately 90°C.
Devices are 100% tested to these parameters.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V V
GS
= 0V, I
D
= 250µA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 9.2 11
m
V
GS
= 4.5V, I
D
= 7.0A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 70
µA
V
DS
= 30V, V
GS
= 0V
––– ––– 10 V
DS
= 24V, V
GS
= 0V
––– ––– 150 V
DS
= 24V,V
GS
= 0V,T
J
= 100°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 12V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -12V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 22 31
nC
Q
gs1
Pre -Vth Gate-to-Source Charge ––– 3.7 ––– V
GS
= 5.0V
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.4 ––– V
DS
= 16V
Q
gd
Gate-to-Drain Charge ––– 6.8 ––– I
D
= 7.0A
Q
sw
Switch Charge (Qgs2 + Qgd) ––– 8.2 11.5
Q
oss
Output Charge ––– 30 36 nC V
DS
= 16V, V
GS
= 0V
R
G
Gate Resistance 0.5 ––– 1.7
t
d(on)
Turn-On Delay Time ––– 16 –––
ns
V
DD
= 16V,V
GS
= 4.5V
t
r
Rise Time ––– 20 –––
I
D
= 7.0A
t
d(off)
Turn-Off Delay Time ––– 38 –––
R
G
= 2
t
f
Fall Time ––– 16 –––
Resistive Load
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 2.5
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 106
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.2 V T
J
= 25°C,I
S
= 7.0A,V
GS
= 0V
Q
rr
Reverse Recovery Charge ––– 88 –––
di/dt = 700A/µs
V
DS
=16V, V
GS
= 0V, I
S
= 7.0A
Q
rr
Reverse Recovery Charge ––– 55 –––
di/dt = 700A/µs (with 10BQ040)
V
DS
=16V, V
GS
= 0V, I
S
= 7.0A
nC
