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PRMD12Z

P1-P3P4-P6P7-P9P10-P12P13-P15
Nexperia
PRMD12
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)
PRMD12 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 11 July 2017 4 / 15
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 385 K/W
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 261 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-024488
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, standard footprint
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
Nexperia
PRMD12
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)
PRMD12 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 11 July 2017 5 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor, for the PNP transistor with negative polarity
I
CBO
collector-base cut-off
current (emitter open)
V
CB
= 50 V; I
E
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 30 V; I
B
= 0 A; T
amb
= 25 °C - - 1 µAI
CEO
collector-emitter cut-off
current (base open)
V
CE
= 30 V; I
B
= 0 A; T
j
= 150 °C - - 5 µA
I
EBO
emitter-base cut-off
current (collector open)
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C - - 90 µA
h
FE
DC current gain V
CE
= 5 V; I
C
= 5 mA; T
amb
= 25 °C 80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA; T
amb
= 25 °C - - 150 mV
V
I(off)
off-state input voltage V
CE
= 5 V; I
C
= 100 µA; T
amb
= 25 °C - 1.2 0.8 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 2 mA; T
amb
= 25 °C 3 1.6 - V
R1 bias resistor 1 [1] 33 47 61 kΩ
R2/R1 bias resistor ratio
T
amb
= 25 °C
[1] 0.8 1 1.2
V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 2.5 pFC
C
collector capacitance
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 3 pF
V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz;
T
amb
= 25 °C
[2] - 230 - MHzf
T
transition frequency
V
CE
= -5 V; I
C
= -10 mA; f = 100 MHz;
T
amb
= 25 °C
[2] - 180 - MHz
[1] See section "Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.
Nexperia
PRMD12
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)
PRMD12 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 11 July 2017 6 / 15
I
C
(mA)
10
-1
10
2
101
006aac752
10
2
10
10
3
h
FE
1
(1)
(2)
(3)
V
CE
= 5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 3. NPN transistor: DC current gain as a function
of collector current; typical values
V
CE
(V)
0 542 31
aaa-018667
0.04
0.06
0.02
0.08
0.1
I
C
(A)
0
I
B
= 0.06 mA
0.12 mA
0.18 mA
0.24 mA
0.30 mA
0.36 mA
0.60 mA
0.42 mA
0.48 mA
0.54 mA
T
amb
= 25 °C
Fig. 4. NPN Transistor: Collector current as a function
of collector-emitter voltage; typical values
aaa-018666
I
C
(mA)
10
-1
10
2
101
10
-1
1
V
CEsat
(V)
10
-2
(1)
(3)
(2)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 5. NPN Transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aac754
I
C
(mA)
10
-1
10
2
101
1
10
V
I(on)
(V)
10
-1
(1)
(2)
(3)
V
CE
= 0.3 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6. NPN transistor: On-state input voltage as a
function of collector current; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15

PRMD12Z

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Nexperia
Description:
Bipolar Transistors - BJT PRMD12/SOT1268 DFN1412-6
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