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PRMD12Z

P1-P3P4-P6P7-P9P10-P12P13-P15
Nexperia
PRMD12
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)
PRMD12 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 11 July 2017 7 / 15
I
C
(mA)
10
-1
101
006aac755
1
10
V
I(off)
(V)
10
-1
(1)
(2)
(3)
V
CE
= 5 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7. NPN transistor: Off-state input voltage as a
function of collector current; typical values
V
CB
(V)
0 504020 3010
006aac756
0.8
1.2
0.4
1.6
2.0
C
c
(pF)
0.0
f = 1 MHz; T
amb
= 25 °C
Fig. 8. NPN transistor: Collector capacitance as a
function of collector-base voltage; typical
values
006aac757
I
C
(mA)
10
-1
10
2
101
10
2
10
3
f
T
(MHz)
10
V
CE
= 5 V; T
amb
= 25 °C
Fig. 9. NPN transistor: Transition frequency as a
function of collector current; typical values of
built-in transistor
I
C
(mA)
-10
-1
-10
2
-10-1
006aac758
10
2
10
10
3
h
FE
1
(1)
(2)
(3)
V
CE
= -5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 10. PNP transistor: DC current gain as a function
of collector current; typical values
Nexperia
PRMD12
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)
PRMD12 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 11 July 2017 8 / 15
V
CE
(V)
0 -5-4-2 -3-1
aaa-017941
-0.04
-0.06
-0.02
-0.08
-0.1
I
C
(A)
0
-0.28 mA
I
B
= -0.07 mA
-0.21 mA
-0.35 mA
-0.42 mA
-0.56 mA
-0.49 mA
-0.63 mA
-0.70 mA
-0.14 mA
T
amb
= 25 °C
Fig. 11. PNP transistor: Collector current as a function
of collector-emitter voltage; typical values
aaa-017946
I
C
(mA)
-10
-1
-10
2
-10-1
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(3)
(2)
I
C
/ I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 12. PNP transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aac760
I
C
(mA)
-10
-1
-10
2
-10-1
-1
-10
V
I(on)
(V)
-10
-1
(1)
(2)
(3)
V
CE
= -0.3 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 13. PNP transistor: On-state input voltage as a
function of collector current; typical values
I
C
(mA)
-10
-1
-10-1
006aac761
-1
-10
V
I(off)
(V)
-10
-1
(1)
(2)
(3)
V
CE
= -5 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 14. PNP transistor: Off-state input voltage as a
function of collector current; typical values
Nexperia
PRMD12
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)
PRMD12 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 11 July 2017 9 / 15
V
CB
(V)
0 -50-40-20 -30-10
006aac762
3
6
9
C
c
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 15. PNP transistor: Collector capacitance as a
function of collector-base voltage; typical
values
006aac763
I
C
(mA)
-10
-1
-10
2
-10-1
10
2
10
3
f
T
(MHz)
10
V
CE
= -5 V; f = 100 MHz; T
amb
= 25 °C
Fig. 16. PNP transistor: Transition frequency as a
function of collector current; typical values of
built-in transistor
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
Resistor calculation
• Calculation of bias resistor 1 (R1)
• Calculation of bias resistor ratio (R2/R1)
R1
R2
GND
I
I1
; I
I2
n.c.
I
I3
; I
I4
aaa-020082
Fig. 17. NPN transistor: Resistor test circuit
P1-P3P4-P6P7-P9P10-P12P13-P15

PRMD12Z

Mfr. #:
Buy PRMD12Z
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PRMD12/SOT1268 DFN1412-6
Lifecycle:
New from this manufacturer.
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