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STB70NF3LLT4

P1-P3P4-P6P7-P9P10-P12P13-P13
July 2006 Rev 7 1/13
13
STB70NF3LL
N-channel 30V - 0.0075Ω - 70A - D
2
PA K
Low gate charge STripFET™ II Power MOSFET
General features
■ Optimal R
DS(on)
x Qg trade-off @ 4.5V
■ Conduction losses reduced
■ Switching losses reduced
Description
This application specific Power MOSFET is the
third genaration of STMicroelectronis unique
"Single Feature Size™" strip-based process. The
resulting transistor shows the best trade-off
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Applications
■ Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STB70NF3LL 30V < 0.0095Ω 70A
D²PAK
1
3
www.st.com
Order codes
Part number Marking Package Packaging
STB70NF3LLT4 B70NF3LL@ D
2
PAK Tape & reel
Contents STB70NF3LL
2/13
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STB70NF3LL Electrical ratings
3/13
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
DGR
Drain-gate voltage (R
GS
= 20 kΩ)30V
V
GS
Gate- source voltage ± 16 V
I
D
(1)
1. Current limited by the package
Drain current (continuous) at T
C
= 25°C 70 A
I
D
Drain current (continuous) at T
C
= 100°C 50 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 280 A
P
TOT
Total dissipation at T
C
= 25°C 100 W
Derating factor 0.67 W/°C
dv/dt
(3)
3. I
SD
≤70A, di/dt ≤350A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ T
JMAX
Peak diode recovery voltage slope 5.5 V/ns
E
AS
(4)
4. Starting T
J
= 25
o
C, I
D
= 35A, V
DD
= 25V
Single pulse avalanche energy 500 mJ
T
stg
Storage temperature
-55 to 175 °C
T
J
Operating junction temperature
Table 2. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case Max 1.5 °C/W
R
thJA
Thermal resistance junction-ambient Max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
P1-P3P4-P6P7-P9P10-P12P13-P13

STB70NF3LLT4

Mfr. #:
Buy STB70NF3LLT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 70 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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