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STB70NF3LLT4
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
Electrical ch
aracteristics
STB70NF3LL
4/13
2 Electrical
characteristics
(T
CASE
=25°C unless otherwise specified)
T
able 3.
On/off state
s
Symbol
P
arameter
T
est co
nditions
Min
T
yp
Max
Unit
V
(BR)DSS
Drain-source
Breakdo
wn v
oltage
I
D
= 250 µA, V
GS
= 0
3
0
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating
T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-bod
y leakag
e
Current (V
DS
= 0)
V
GS
= ± 16 V
±100
nA
V
GS(th)
Gate threshold v
oltage
V
DS
= V
GS
I
D
= 250µA
1
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V
I
D
= 35A
V
GS
= 4.5V
I
D
= 18A
0.0075
0.010
0.0095
0.012
Ω
Ω
T
able 4.
Dynamic
Symbol
Pa
rameter
T
est conditions
Min
T
yp
Max
Unit
g
fs
Fo
r
wa
r
d
T
ransconductance
V
DS
= 15V
I
D
=3
5
A
2
5
S
C
iss
C
oss
C
rss
Input capacita
nce
Output capacitance
Re
ve
rse transf
er
capacitance
V
DS
= 25V f = 1M
Hz V
GS
= 0
1650
540
130
pF
pF
pF
STB70NF3L
L
El
ectrical chara
cteristic
s
5/13
T
able 5.
Switching ti
mes
Symbol
Parameter
T
est conditions
Min
T
yp
Max
Unit
t
d(on)
t
r
T
ur
n-on delay
time
Rise time
V
DD
= 15V
I
D
= 35A
R
G
=4
.
7
Ω
V
GS
= 4.5V
(Resistive Load
Figure
16
)
23
165
ns
ns
Q
g
Q
gs
Q
gd
T
otal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 15V I
D
= 70A
V
GS
= 4.5V
24
8.5
12
33
nC
nC
nC
t
d(off)
t
f
T
urn-off delay time
Fa
l
l
t
i
m
e
V
DD
= 15 V
I
D
= 35 A
R
G
=4
.
7
Ω,
V
GS
= 4.5 V
(Resistive Load
Figure
16
)
27
28
ns
ns
T
able 6.
Source drain diode
Symbol
Parameter
T
est conditions
Min
T
yp
Max
Unit
I
SD
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
70
280
A
A
V
SD
(2)
2.
Pulsed: Pulse duration =
300 µs, duty cycle 1.5 %.
F
orw
ard on v
olta
ge
I
SD
= 70 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Rev
erse recovery
time
Re
verse reco
very charge
Re
ver
se recov
ery current
I
SD
= 70 A
di/dt = 100A/µs
V
DD
= 20 V
T
J
= 150°C
(see test circuit
Figure
14
)
42
52
2.5
ns
nC
A
Electrical ch
aracteristics
STB70NF3LL
6/13
2.1 Electrical
characterist
ics (curves)
Figure 1.
Safe operat
ing area
Figure 2.
Thermal impedance
Figure 3.
Output charact
erisics
Figure 4.
T
ransfer characteristic
s
Figure 5.
Source
-drain diode f
orwar
d
characte
ristics
Figure 6.
Static
drain-sour
ce on resis
tance
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
STB70NF3LLT4
Mfr. #:
Buy STB70NF3LLT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 70 Amp
Lifecycle:
New from this manufacturer.
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STB70NF3LLT4