FDB886
0
_F085 Rev A www.fairchildsemi.com2
Electrical Characteristics T
J
= 25°C unless otherwise noted
Of
f Characteristics
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Dr
ain to Source Breakdown Voltage I
D
= 1mA, V
GS
= 0V 30 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V
V
GS
= 0V
--1
PA
T
J
= 150°C - - 250
I
GSS
Gate to Sour
ce Leakage Current V
GS
= r20
V--r100 nA
V
GS(t
h)
Gate to Sour
ce Threshold Voltage V
DS
= V
GS
, I
D
= 250PA 1 1.7 3 V
R
DS(ON)
Dr
ain to Source On Resistance
I
D
= 80A, V
GS
= 10V - 1.6 2.3
m:
I
D
= 80
A, V
GS
= 5V - 1.9 2.6
I
D
= 80
A, V
GS
= 4.5
V - 2.1 2.7
I
D
= 80
A, V
GS
= 10
V,
T
J
= 175°C
- 2.5 3.6
C
ISS
Input C
apacitance
V
DS
= 15V, V
GS
= 0V,
f =
1MHz
- 9460 12585 pF
C
OSS
Output Capa
citance - 1710 2275 pF
C
RSS
Reverse T
ransfer Capacitance - 1050 1575 pF
R
G
Gate Resi
stance f = 1MHz - 1.8 - :
Q
g(TOT)
Tot
al Gate Charge at 10V V
GS
= 0V to 10V
V
DD
= 15V
I
D
=
80A
I
g
= 1.0
mA
- 165 214 nC
Q
g(
5)
Tot
al Gate Charge at 5V V
GS
= 0V to 5V - 89 115 nC
Q
g(
TH)
Thr
eshold Gate Charge V
GS
= 0V to 1V - 9.1 12 nC
Q
gs
Gate to Source Gate C
harge - 26 - nC
Q
gs2
Gate Char
ge Threshold to Plateau - 18 - nC
Q
gd
Gate to Drain “Miller” Charge - 33 - nC
MOSFET Maximum Ratings T
C
= 25
°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Par
ameter Ratings Units
V
DSS
Dr
ain to Source Voltage 30 V
V
GS
Gate to Source
Voltage ±20 V
I
D
Dr
ain Current
Continuous (V
GS
= 10V, T
C
< 163
o
C)
80 A
Con
tinuous (V
GS
= 5V, T
C
< 162
o
C) 80 A
Con
tinuous (V
GS
= 10V, T
C
= 25
o
C, with R
TJA
= 43
o
C/W) 31 A
Pulsed Figure 4 A
E
AS
S
i n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 1 ) 9 4 7 mJ
P
D
Power
Dissipation 254 W
Derate above 25
o
C1.7W/
o
C
T
J
, T
ST
G
Opera
ting and Storage Temperature -55 to +175
o
C
R
TJC
T
hermal Resistance Junction to Case 0.59
o
C/W
R
TJA
T
hermal Resistance Junction to Ambient (Note 2) 62
o
C/W
R
TJA
T
hermal Resistance Junction to Ambient TO-263,1in
2
copper
pad area 43
o
C/W
Device
Marking Device Package Reel Size Tape Width Quantity
_F085 24mm 800units
F
DB8860 FDB8860 TO-263AB 330mm
FDB8860_F085 N-Channel Logic Level PowerTrench
®
MOSFET
