Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics
Figure 9. Drain to Source On-Resistance
Variation vs
Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics T
J
= 25°C unless otherwise noted
110
0.1
1
10
100
1000
10us
10ms
DC
100ms
1ms
100us
I
D
, DRAIN CURRENT(A)
V
DS
, DRAIN TO SOURCE VOLTAGE(V)
60
LIMITED BY R
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
BY PACKAGE
CURRENT LIMITED
0.1 1 10 100 1000 10000
1
10
100
STARTING T
J
= 150
o
C
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
500
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
z
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
1.0 1.5 2.0 2.5 3.0 3.5
0
40
80
120
160
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.00.20.40.60.81.0
0
20
40
60
80
100
120
V
GS
= 4V
V
GS
= 10V
V
GS
= 5V
V
GS
= 3V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
345678910
1.5
2.0
2.5
3.0
3.5
4.0
T
J
= 25
o
C
PULSE DURATION = 80Ps
DUTY CYCLE=0.5% MAX
R
DS(ON)
, DRAIN TO SOURCE
ON-RESISTANCE
(m:
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 40A
T
J
= 175
o
C
-80 -40 0 40 80 120 160 200
0.6
0.8
1.0
1.2
1.4
1.6
ID = 80A
V
GS = 10V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5% MAX
T
J
, JUNCTION TEMPERATURE(
O
C)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
FDB8860_F085 N-Channel Logic Level PowerTrench
®
MOSFET
FDB886
0
_F085 Rev A www.fairchildsemi.com5
