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IXFP4N85X

P1-P3P4-P5
© 2018 IXYS CORPORATION, All Rights Reserved
DS100768A(06/18)
X-Class HiPERFET
Power MOSFET
N-Channel Enhancement Mode
IXFY4N85X
IXFA4N85X
IXFP4N85X
V
DSS
= 850V
I
D25
= 3.5A
R
DS(on)
2.5
Features
International Standard Packages
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 850 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 3.0 5.5 V
I
GSS
V
GS
= 30V, V
DS
= 0V 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 5 A
T
J
= 125C 500 A
R
DS(on)
V
GS
= 10V, I
D
= 2A, Note 1 2.5
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 850 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 850 V
V
GSS
Continuous 30 V
V
GSM
Transient 40 V
I
D25
T
C
= 25C 3.5 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
10.0 A
I
A
T
C
= 25C2A
E
AS
T
C
= 25C 125 mJ
dv/dt I
S
I
DM
, V
DD
V
DSS
, T
J
150°C 50 V/ns
P
D
T
C
= 25C 150 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
F
C
Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
M
d
Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
Preliminary Technical Information
G = Gate D = Drain
S = Source Tab = Drain
TO-263 (IXFA)
G
TO-252 (IXFY)
G
S
D (Tab)
D (Tab)
S
TO-220 (IXFP)
D (Tab)
S
G
D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFY4N85X IXFA4N85X
IXFP4N85X
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 2A, Note 1 1.2 2.0 S
R
Gi
Gate Input Resistance 3
C
iss
247 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 305 pF
C
rss
5 pF
C
o(er)
27 pF
C
o(tr)
60 pF
t
d(on)
13 ns
t
r
27 ns
t
d(off)
28 ns
t
f
20 ns
Q
g(on)
7.0 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 2A 2.3 nC
Q
gd
3.3 nC
R
thJC
0.83 C/W
R
thCS
TO-220 0.50 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 2A
R
G
= 30 (External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 4 A
I
SM
Repetitive, pulse Width Limited by T
JM
16 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
170 ns
Q
RM
770 nC
I
RM
9 A
I
F
= 2A, -di/dt = 100A/μs
V
R
= 100V
© 2018 IXYS CORPORATION, All Rights Reserved
IXFY4N85X IXFA4N85X
IXFP4N85X
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
01234567891011
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
7V
8V
9V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 2A Value vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 4A
I
D
= 2A
Fig. 5. R
DS(on)
Normalized to I
D
= 2A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0123456
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Maximum Drain Current vs. Case Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
1
2
3
4
5
6
0 4 8 12 16 20 24 28 32
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
9V
P1-P3P4-P5

IXFP4N85X

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Manufacturer:
Littelfuse
Description:
MOSFET DISCMSFT NCH ULTRJNCT XCLASS
Lifecycle:
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