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IXFP4N85X

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFY4N85X IXFA4N85X
IXFP4N85X
Fig. 8. Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
125
o
C
25
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
2
4
6
8
10
12
14
16
18
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
2
4
6
8
10
01234567
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 425V
I
D
= 2A
I
G
= 10mA
Fig. 11. Capacitance
0.1
1
10
100
1000
10000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 7. Input Admittance
0
1
2
3
4
5
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 12. Output Capacitance Stored Energy
0
1
2
3
4
5
6
7
8
9
10
0 100 200 300 400 500 600 700 800 900
V
DS
- Volts
E
OSS
- MicroJoules
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_4N85X(S2-D901) 12-05-16
IXFY4N85X IXFA4N85X
IXFP4N85X
TO-220 OutlineTO-252 Outline TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
2
3
4
L3
A2
A1
e
c
e
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
1 - Gate
2,4 - Drain
3 - Source
E1
E
A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e
c
e1
e1
3X b2
e
3X b
EJECTOR
PIN
Fig. 14. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 13. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Sin
g
le Pulse
25μs
1ms
100μs
R
DS(
on
)
Limit
10ms
DC
P1-P3P4-P5

IXFP4N85X

Mfr. #:
Buy IXFP4N85X
Manufacturer:
Littelfuse
Description:
MOSFET DISCMSFT NCH ULTRJNCT XCLASS
Lifecycle:
New from this manufacturer.
Delivery:
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