BGA614H6327XTSA1

Data Sheet 4 Rev. 2.1, 2011-09-02
BGA614
Silicon Germanium Broadband MMIC Amplifier
1 Silicon Germanium Broadband MMIC Amplifier
Figure 1 Pin connection
Description
BGA614 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized
for a typical supply current of 40 mA.
The BGA614 is based on Infineon Technologies’ B7HF Silicon Germanium technology.
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Feature
Cascadable 50 Ω-gain block
3 dB-bandwidth: DC to 2.4 GHz with
19 dB typical gain at 1.0 GHz
Compression point
P
-1dB
= 12 dBm at 2.0 GHz
Noise figure
F
50Ω
= 2.1 dB at 2.0 GHz
Absolute stable
•70GHz
f
T
- Silicon Germanium technology
1 kV HBM ESD protection (Pin-to-Pin)
Pb-free (RoHS compliant) package
Applications
Driver amplifier for GSM/PCS/CDMA/UMTS
Broadband amplifier for SAT-TV & LNBs
Broadband amplifier for CATV
SOT343
Type Package Marking
BGA614 SOT343 BOs
1
2
3
4
GND, 2,4
IN, 1
Out, 3
BGA614
Electrical Characteristics
Data Sheet 5 Rev. 2.1, 2011-09-02
Maximum Ratings
Note: All Voltages refer to GND-Node
Thermal resistance
2 Electrical Characteristics
Electrical characteristics at T
A
= 25 °C (measured in test circuit specified in Figure 2)
V
CC
= 5 V, R
Bias
= 62 Ω, Frequency = 2 GHz, unless otherwise specified
Table 1 Maximum ratings
Parameter Symbol Limit Value Unit
Device voltage
V
D
3V
Device current
I
D
80 mA
Current into pin In
I
in
0.7 mA
Input power
1)
1)Valid for Z
S
= Z
L
= 50 Ω, V
CC
= 5 V, R
Bias
= 62 Ω
P
in
10 dBm
Total power dissipation,
T
S
< 102 °C
2)
2) T
S
is measured on the ground lead at the soldering point
P
tot
240 mW
Junction temperature
T
J
150 °C
Ambient temperature range
T
A
-65... 150 °C
Storage temperature range
T
STG
-65... 150 °C
ESD capability all pins (HBM: JESD22-A114) V
ESD
1000 V
Table 2 Thermal resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
1) For calculation of R
thJA
please refer to Application Note Thermal Resistance
R
thJS
200 K/W
Table 3 Electrical Characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Insertion power gain
|S
21
|
2
19.8 dB f = 0.1 GHz
19.0 dB
f = 1.0 GHz
17.5 dB
f = 2.0 GHz
Noise figure (
Z
S
= 50 Ω) F
50Ω
1.8 dB f = 0.1 GHz
2.0 dB
f = 1.0 GHz
2.1 dB
f = 2.0 GHz
Output power at 1 dB gain
compression
P
-1dB
12 dBm
Output third order intercept point
OIP
3
25 dBm
Input return loss
RL
in
18 dB
Output return loss
RL
out
20 dB
Total device current
I
D
40 mA
Data Sheet 6 Rev. 2.1, 2011-09-02
BGA614
Electrical Characteristics
Figure 2 Test Circuit for Electrical Characteristics and S-Parameter
BGA614_Test_Circuit.vsd
Reference Plane
Top View
In
Out
In
OutGND
GND
Bias-T
Bias-T
Reference Plane
R
Bia s
= 62Ω
V
D
I
D
V
CC
= 5V
Caution:
Device Voltage V
D
at Pin Out!
V
D
= V
CC
- R
Bia s
I
D

BGA614H6327XTSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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