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BGA614H6327XTSA1

P1-P3P4-P6P7-P9
BGA614
Measured Parameters
Data Sheet 7 Rev. 2.1, 2011-09-02
3 Measured Parameters
Power Gain |S
21
|
2
, G
ma
= f(f)
V
CC
= 5V, R
Bias
= 62Ω, I
C
= 40mA
10
−1
10
0
10
1
0
2
4
6
8
10
12
14
16
18
20
22
Frequency [GHz]
|S
21
|
2
, G
ma
[dB]
|S
21
|
2
G
ma
Matching |S
11
|, |S
22
| = f(f)
V
CC
= 5V, R
Bias
= 62Ω, I
C
= 40mA
10
−1
10
0
10
1
−30
−25
−20
−15
−10
−5
0
Frequency [GHz]
|S
11
|, |S
22
| [dB]
S
11
S
22
Power Gain |S
21
| = f(I
D
)
f = parameter in GHz
0 20 40 60 80
0
2
4
6
8
10
12
14
16
18
20
22
I
D
[mA]
|S
21
|
2
[dB]
1
2
3
4
6
8
Output Compression Point
P
−1dB
= f(I
D
), f = 2GHz
0 20 40 60 80
0
2
4
6
8
10
12
14
16
18
20
I
D
[mA]
P
−1dB
[dBm]
Data Sheet 8 Rev. 2.1, 2011-09-02
BGA614
Measured Parameters
Device Current I
D
= f(V
CC
)
R
Bias
= parameter in Ω
0 1 2 3 4 5 6
0
10
20
30
40
50
60
70
80
V
CC
[V]
I
D
[mA]
01627
47
68
100
150
Device Current I
D
= f(T
A
)
V
CC
= 5V,R
Bias
= parameter in Ω
−40 −20 0 20 40 60 80
30
32
34
36
38
40
42
44
46
48
50
T
A
[°C]
I
D
[mA]
56
62
68
Noise figure F = f(f)
V
CC
= 5V, R
Bias
= 62Ω, Z
S
= 50Ω
T
A
= parameter in °C
0 0.5 1 1.5 2 2.5 3
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
F [dB]
−20°C
+25°C
+80°C
BGA614
Package Information
Data Sheet 9 Rev. 2.1, 2011-09-02
4 Package Information
Figure 3 Package Outline SOT343
Figure 4 Tape for SOT343
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
GPS05605
0.3
+0.1
2
±0.2
±0.1
0.9
12
34
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1
M
4x
0.1
0.1 MIN.
P1-P3P4-P6P7-P9

BGA614H6327XTSA1

Mfr. #:
Buy BGA614H6327XTSA1
Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
Lifecycle:
New from this manufacturer.
Delivery:
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