© 2009 IXYS All rights reserved
2 - 6
20090220b
MWI 75-12A8
IXYS reserves the right to change limits, test conditions and dimensions.
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitve reverse voltage
T
VJ
= 25°C 1200 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
150
100
A
A
V
F
forward voltage
I
F
=75A;V
GE
= 0 V T
VJ
= 25°C
T
VJ
=125°C
2.2
1.6
2.6 V
V
I
RM
t
rr
max. reverse recovery current
reverse recovery time
V
R
=600V;I
F
=75A;V
GE
= 0 V
di
F
/dt=-750A/µs T
VJ
=125°C
79
220
A
ns
R
thJC
thermal resistance junction to case
(perdiode) 0.41 K/W
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
125
85
A
A
P
tot
total power dissipation
T
C
= 25°C 500 W
V
CE(sat)
collector emitter saturation voltage
I
C
=75A;V
GE
=15V T
VJ
= 25°C
T
VJ
=125°C
2.2
2.5
2.6 V
V
V
GE(th)
gate emitter threshold voltage
I
C
=3mA;V
GE
= V
CE
T
VJ
= 25°C 4.5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
;V
GE
= 0 V T
VJ
= 25°C
T
VJ
=125°C 3
5 mA
mA
I
GES
gate emitter leakage current
V
GE
= ±20 V 400 nA
C
ies
input capacitance
V
CE
=25V;V
GE
=0V;f=1MHz 5.5 nF
Q
G(on)
total gate charge
V
CE
=600V;V
GE
=15V;I
C
=75A 350 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
=125°C
V
CE
=600V;I
C
=75A
V
GE
=±15V;R
G
=15W
100
50
650
50
12.1
10.5
ns
ns
ns
ns
mJ
mJ
RBSOA
reverse bias safe operating area
V
GE
=±15V;R
G
=15W;
T
VJ
=125°C
V
CEK
< 1200 V 150 A
SCSOA
t
SC
I
SC
short circuit safe operating area
short circuit duration
short circuit current
V
CE
=1200V;V
GE
=±15V; T
VJ
=125°C
R
G
=15W;non-repetitive 300
10 µs
A
R
thJC
thermal resistance junction to case
(perIGBT) 0.25 K/W
