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MWI75-12A8

P1-P3P4-P6
© 2009 IXYS All rights reserved
4 - 6
20090220b
MWI 75-12A8
IXYS reserves the right to change limits, test conditions and dimensions.
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MWI75-12A8 MWI75-12A8 Box 5 486787
Circuit Diagram
Outline Drawing Dimensionsinmm(1mm=0.0394“)
Product Marking
9
10
11
12
5
6
7
8
1
2
3
4
19
17
15
13,21
14, 20
© 2009 IXYS All rights reserved
5-6
20090220b
MWI 75-12A8
IXYS reserves the right to change limits, test conditions and dimensions.
0 200 400 600 800 1000
0
80
160
240
320
0
50
100
150
200
0 1 2 3 4 5
0
50
100
150
200
250
0 100 200 300 400
0
5
10
15
20
0 1 2 3 4 5
0
50
100
150
200
250
V
CE
[V]
I
C
[A]
MWI75-12A8
I
RM
t
rr
9 V
11 V
4 5 6 7 8 9 10
0
20
40
60
80
100
0 1 2 3
0
50
100
150
200
250
V
GE
=17V
15V
T
VJ
=25°C
9 V
11 V
13V
V
GE
=17V
T
VJ
=125°C
T
VJ
=25°C
V
CE
= 20 V
T
VJ
=125°C
T
VJ
=25°C
13V
15V
V
CE
= 600 V
I
C
= 100 A
T
VJ
=125°C
V
R
= 600 V
I
F
= 100 A
T
VJ
=125°C
V
CE
[V]
I
C
[A]
V
CE
[V]
I
C
[A]
V
F
[V]
I
F
[A]
Q
G
[nC]
V
GE
[V]
-di/dt[A/µs]
I
RM
[A]
t
rr
[ns]
Fig.1 Typ.outputcharacteristics Fig.2 Typ.outputcharacteristics
Fig.5 Typ.turnongatecharge Fig.6 Typ.turnoffcharacteristics
offreewheelingdiode
Fig.3 Typ.transfercharacteristics Fig.4 Typ.forwardcharacteristics
offreewheelingdiode
© 2009 IXYS All rights reserved
6 - 6
20090220b
MWI 75-12A8
IXYS reserves the right to change limits, test conditions and dimensions.
0 40 80 120 160
0
8
16
24
32
0
2
4
6
8
0 40 80 120 160
0
5
10
15
20
0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
0 10 20 30 40 50 60
0
5
10
15
0 10 20 30 40 50 60
0
8
16
24
32
0
2
4
6
8
0 200 400 600 800 1000 1200 1400
0
50
100
150
200
I
C
[A]
E
on
[mJ]
t
[ns]
t [s]
Z
thJC
[K/W]
E
on
singlepulse
diode
IGBT
E
on
t
d(on)
V
CE
= 600 V
V
GE
=±15V
I
C
=75A
T
VJ
=125°C
V
CE
= 600 V
V
GE
=±15V
I
C
=75A
T
VJ
=125°C
R
G
=15W
T
VJ
=125°C
V
CE
= 600 V
V
GE
=±15V
R
G
=15W
T
VJ
=125°C
V
CE
= 600 V
V
GE
=±15V
R
G
=15W
T
VJ
=125°C
t
d(on)
MWI75-12A8
E
off
[mJ]
I
C
[A]
E
on
[mJ]
R
G
[W]
E
off
[mJ]
R
G
[W]
t
[ns]
I
CM
[A]
V
CE
[V]
Fig.7 Typ.turnonenergyandswitching
times versus collector current
Fig.8 Typ.turnoffenergyandswitching
times versus collector current
Fig.9 Typ.turnonenergyandswitching
times versus gate resistor
Fig.10 Typ.turnoffenergyandswitching
times versus gate resistor
Fig.11ReversebiasedsafeoperatingareaRBSOA Fig.12 Typ.transientthermalimpedance
P1-P3P4-P6

MWI75-12A8

Mfr. #:
Buy MWI75-12A8
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules IGBT MOD 1200V, 75A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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