SBC856BWT1G Datasheet SBC856BWT1G, BC856BWT1G, SBC857BWT1G | P1-P3

April, 2015 − Rev. 4

1 Publication Order Number:

BC856BWT1/D

BC856B, BC857B, BC858A

General Purpose

Transistors

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

Features

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Emitter Voltage

BC856

BC857

BC858

V

CEO

−65

−45

−30

V

Collector-Base Voltage

BC856

BC857

BC858

V

CBO

−80

−50

−30

V

Emitter−Base Voltage V

EBO

−5.0 V

Collector Current − Continuous I

C

−100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) T

A

= 25°C

P

D

150 mW

Thermal Resistance,

Junction−to−Ambient

R

q

JA

883 °C/W

Junction and Storage Temperature T

J

, T

stg

−55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

www.onsemi.com

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

1

2

3

COLLECTOR

3

1

BASE

2

EMITTER

See detailed ordering and shipping information in the packag

e

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

1

XX M G

G

XX = Specific Device Code

M = Date Code*

G = Pb−Free Package

*Date Code orientation may vary depending up-

on manufacturing location.

(Note: Microdot may be in either location)

BC856B, BC857B, BC858A

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage BC856

(I

C

= −10 mA) BC857

BC858

V

(BR)CEO

−65

−45

−30

−

V

Collector−Emitter Breakdown Voltage BC856

(I

C

= −10 mA, V

EB

= 0) BC857

BC858

V

(BR)CES

−80

−50

−30

−

V

Collector−Base Breakdown Voltage BC856

(I

C

= −10 mA) BC857

BC858

V

(BR)CBO

−80

−50

−30

−

V

Emitter−Base Breakdown Voltage BC856

(I

E

= −1.0 mA) BC857

BC858

V

(BR)EBO

−5.0

−

V

Collector Cutoff Current (V

CB

= −30 V)

Collector Cutoff Current (V

CB

= −30 V, T

A

= 150°C)

I

CBO

−

−15

−4.0

nA

mA

ON CHARACTERISTICS

DC Current Gain BC856A, BC585A

(I

C

= −10 mA, V

CE

= −5.0 V) BC856B, BC857B, BC858B

BC857C

(I

C

= −2.0 mA, V

CE

= −5.0 V) BC856A, BC858A

BC856B, BC857B, BC858B

BC857C

h

FE

−

125

220

420

90

150

270

180

290

520

−

250

475

800

−

Collector−Emitter Saturation Voltage

(I

C

= −10 mA, I

B

= −0.5 mA)

(I

C

= −100 mA, I

B

= −5.0 mA)

V

CE(sat)

−

−0.3

−0.65

V

Base−Emitter Saturation Voltage

(I

C

= −10 mA, I

B

= −0.5 mA)

(I

C

= −100 mA, I

B

= −5.0 mA)

V

BE(sat)

−

−0.7

−0.9

−

V

Base−Emitter On Voltage

(I

C

= −2.0 mA, V

CE

= −5.0 V)

(I

C

= −10 mA, V

CE

= −5.0 V)

V

BE(on)

−0.6

−

−0.75

−0.82

V

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= −10 mA, V

CE

= −5.0 Vdc, f = 100 MHz)

f

T

100 − − MHz

Output Capacitance

(V

CB

= −10 V, f = 1.0 MHz)

C

ob

− − 4.5 pF

Noise Figure

(I

C

= −0.2 mA, V

CE

= −5.0 Vdc, R

S

= 2.0 kW,

f = 1.0 kHz, BW = 200 Hz)

NF − − 10 dB

BC856B, BC857B, BC858A

www.onsemi.com

3

BC857/BC858

Figure 1. Normalized DC Current Gain

I

C

, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

I

C

, COLLECTOR CURRENT (mAdc)

-0.2

0.2

Figure 3. Collector Saturation Region

I

B

, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

I

C

, COLLECTOR CURRENT (mA)

-0.6

-0.7

-0.8

-0.9

-1.0

-0.5

0

-0.2

-0.4

-0.1

-0.3

1.6

1.2

2.0

2.8

2.4

-1.2

-1.6

-2.0

-0.02 -1.0

-10

0

-20

-0.1

-0.4

-0.8

h

FE

, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

V

CE

, COLLECTOR-EMITTER VOLTAGE (V)

VB

, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.7

0.5

0.3

-0.2

-10 -100

-1.0

T

A

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

CE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= -10 V

V

CE

= -10 V

T

A

= 25°C

-55°C to +125°C

I

C

= -100 mA

I

C

= -20 mA

-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1

-0.2 -0.5

-1.0

-2.0 -5.0

-10

-20 -50

-100

I

C

= -200 mAI

C

= -50 mAI

C

=

-10 mA

Figure 5. Capacitances

V

R

, REVERSE VOLTAGE (VOLTS)

10

Figure 6. Current−Gain − Bandwidth Product

I

C

, COLLECTOR CURRENT (mAdc)

-0.4

1.0

80

100

200

300

400

60

20

40

30

7.0

5.0

3.0

2.0

-0.5

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

T

A

= 25°C

C

ob

C

ib

-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40

150

-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50

V

CE

= -10 V

T

A

= 25°C

T

A

= 25°C

1.0

SBC856BWT1G

SBC856BWT1G

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