SBC856BWT1G

BC856B, BC857B, BC858A
www.onsemi.com
4
BC856
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
I
C
, COLLECTOR CURRENT (mA)
-0.8
-1.0
-0.6
-0.2
-0.4
1.0
2.0
-0.1 -1.0
-10 -200
-0.2
0.2
0.5
-0.2 -1.0
-10 -200
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= -5.0 V
Figure 9. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-1.0
-1.2
-1.6
-2.0
-0.02 -1.0
-10
0
-20
-0.1
-0.4
-0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
-0.2 -2.0
-10 -200
-1.0
T
J
= 25°C
I
C
=
-10 mA
h
FE
, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
V
CE
= -5.0 V
T
A
= 25°C
0
-0.5 -2.0 -5.0
-20 -50 -100
-0.05 -0.2 -0.5 -2.0 -5.0
-100 mA
-20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
-0.5 -5.0 -20
-50 -100
-55°C to 125°C
q
VB
for V
BE
-2.0
-5.0
-20
-50
-100
Figure 11. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2 -1.0 -50
2.0
-2.0 -10
-100
100
200
500
50
20
20
10
6.0
4.0
-1.0 -10
-100
V
CE
= -5.0 V
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
-0.5 -5.0 -20
T
J
= 25°C
C
ob
C
ib
8.0
-50 mA
-200 mA
BC856B, BC857B, BC858A
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5
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
Figure 14. Active Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
-200
-1.0
I
C
, COLLECTOR CURRENT (mA)
T
A
= 25°C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
T
J
= 25°C
Z
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 83.3°C/W MAX
Z
q
JA
(t) = r(t) R
q
JA
R
q
JA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
q
JC
(t)
t
1
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
-100
-50
-10
-5.0
-2.0
-5.0 -10 -30 -45 -65 -100
1 s
BC858
BC857
BC856
The safe operating area curves indicate I
C
−V
CE
lim
-
its of the transistor that must be observed for reliable oper
-
ation. Collector load lines for specific circuits must fal
l
below the limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curve
s
are valid for duty cycles to 10% provided T
J(pk)
150°C
.
T
J(pk)
may be calculated from the data in Figure 13. A
t
high case or ambient temperatures, thermal limitation
s
will reduce the power that can be handled to values les
s
than the limitations imposed by the secondary breakdown
.
ORDERING INFORMATION
Device Marking Package Shipping
BC856BWT1G
3B
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
SBC856BWT1G*
BC857BWT1G
3F
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
SBC857BWT1G*
BC857CWT1G
3G
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
NSVBC857CWT1G*
BC858AWT1G
3J
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
BC858BWT1G
3K
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
BC856B, BC857B, BC858A
www.onsemi.com
6
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028
ǒ
mm
inches
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b 0.30 0.35 0.40 0.012
c 0.10 0.18 0.25 0.004
D 1.80 2.10 2.20 0.071
E 1.15 1.24 1.35 0.045
e 1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
H
E
e1
0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56
0.008 0.022
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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P
UBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
BC856BWT1/D
LITERATURE FULFILLMENT:
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al
Sales Representative

SBC856BWT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS GP XSTR PNP 65V
Lifecycle:
New from this manufacturer.
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