www.irf.com 1
08/17/07
IRF6618PbF
IRF6618TRPbF
Applicable DirectFET Package/Layout Pad (see p.7, 8 for details)
SQ SX ST MQ MX
MT
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.75mH, R
G
= 25Ω, I
AS
= 24A.
V
DSS
V
GS
R
DS(on)
R
DS(on)
30V max ±20V max
2.2mΩ@ 10V 3.4mΩ@ 4.5V
DirectFET ISOMETRIC
MT
so
ute
ax
mum
at
ngs
Parameter Units
V
DS
Drain-to-Source Volta
e V
V
GS
Gate-to-Source Volta
e
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C
Continuous Drain Current, VGS @ 10V
A
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
210
24
Max.
30
24
240
±20
30
170
DirectFET Power MOSFET
l RoHs Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
Description
The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6618PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6618PbF has been optimized for
parameters that are critical in synchronous buck converter’s SyncFET sockets.
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
43nC 15nC 4.0nC 46nC 28nC 1.64V
0 102030405060
Q
G
Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 24A
2 3 4 5 6 7 8 9 10
V
GS,
Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
I
D
= 30A
T
J
= 25°C
T
J
= 125°C
PD - 97240A
