IRF6618TRPBF

IRF6618PbF
4 www.irf.com
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
BOTTOM 2.7V
60µs PULSE WIDTH
Tj = 25°C
2.7V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.7V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
BOTTOM 2.7V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 30A
V
GS
= 10V
1.5 2.0 2.5 3.0 3.5 4.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 10V
60µs PULSE WIDTH
Fig 8. Typical Capacitance vs.
Drain-to-Source Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
IRF6618PbF
www.irf.com 5
Fig 9. Typical Source-Drain Diode Forward Voltage
Fig 10. Maximum Safe Operating Area
Fig 12. Threshold Voltage vs. Temperature
Fig 11. Maximum Drain Current vs.
Case Temperature
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
0 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
T
C
= 25°C
Tj = 150°C
Single Pulse
0.2 0.4 0.6 0.8 1.0 1.2
V
SD
, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
25 50 75 100 125 150
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
900
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 9.3A
11A
BOTTOM 24A
IRF6618PbF
6 www.irf.com
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 14a. Gate Charge Test Circuit
Fig 14b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 15b. Unclamped Inductive Waveforms
t
p
V
(BR)DSS
I
AS
Fig 15a. Unclamped Inductive Test Circuit
Fig 16b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
Fig 16a. Switching Time Test Circuit
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
V
DD
V
DS
L
D
D.U.T
+
-
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS

IRF6618TRPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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