© 2005 IXYS All rights reserved
1 - 4
0527
IXLF 19N250A
IXYS reserves the right to change limits, test conditions and dimensions.
High Voltage IGBT
in High Voltage
ISOPLUS i4-PAC
TM
Features
• High Voltage IGBT
- substitute for high voltage MOSFETs
with significantly lower voltage drop
and comparable switching speed
- substitute for high voltage thyristors
with voltage control of turn on & turn off
- substitute for electromechanical trigger
and discharge relays
• ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- UL registered
E72873
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• laser generators, x ray generators
• discharge circuits
I
C25
= 32 A
V
CES
= 2500 V
V
CE(sat)
= 3.2 V
t
f
= 250 ns
5
1
2
1
5
2
IGBT
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 2500 V
V
GES
±
20 V
I
C25
T
C
= 25°C 32 A
I
C90
T
C
= 90°C 19 A
I
CM
V
GE
=
±
15 V; R
G
= 47 Ω; T
VJ
= 125°C 70 A
V
CEK
RBSOA, Clamped inductive load; L = 100 µH 1200 V
P
tot
T
C
= 25°C 250 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 19 A; V
GE
= 15 V; T
VJ
= 25°C 3.2 3.9 V
T
VJ
= 125°C 4.7 V
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
58V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 0.15 mA
T
VJ
= 125°C 0.2 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 500 nA
t
d(on)
100 ns
t
r
50 ns
t
d(off)
600 ns
t
f
250 ns
E
on
15 mJ
E
off
30 mJ
C
ies
2.28 nF
C
oes
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 103 pF
C
res
43 pF
Q
Gon
V
CE
= 1500V; V
GE
= 15 V; I
C
= 19 A 142 nC
R
thJC
0.5 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 1500 V; I
C
= 19 A
V
GE
=
±
15 V; R
G
= 47 Ω
