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IXLF19N250A
P1-P3
P4-P4
© 2005 IXYS All rights reserved
4 - 4
0527
IXLF 19N250A
IXYS reserves the right to change limits, test conditions and dimensions.
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E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
mJ
E
on
mJ
E
off
ns
t
ns
t
mJ
ns
ns
mJ
V
CE
= 1500 V
V
GE
= ±15 V
R
G
= 4
7
Ω
T
J
= 125°C
V
CE
= 1500 V
V
GE
= ±15 V
R
G
= 47
Ω
T
J
= 125°
C
0.001
0.01
0.1
1
10
0.01
0.1
1
t
s
K/W
Z
thJC
singl
e pulse
IXLF19N250A
V
CE
= 1500 V
V
GE
= ±15 V
I
C
= 19 A
T
J
= 125°C
V
CE
= 1500 V
V
GE
= ±15 V
I
C
= 19 A
T
J
= 125°C
Fig. 7
Typ. turn on energy and switching
Fig. 8
Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 11
Typ. transient thermal impedance
Fig. 9
Typ. turn on energy and switching
Fig. 10
Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
P1-P3
P4-P4
IXLF19N250A
Mfr. #:
Buy IXLF19N250A
Manufacturer:
Littelfuse
Description:
IGBT Transistors High Voltage IGBT 2500V; 19A
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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IXLF19N250A