IXTH60N25 Datasheet IXTH60N25 | P1-P3

Advance Technical Information

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

V

DSS

V

GS

= 0 V, I

D

= 250 µA 250 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA 2.0 4.0 V

I

GSS

V

GS

= ±20 V DC, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125°C 250 µA

R

DS(on)

V

GS

= 10 V, I

D

= 15A 46 mΩ

Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%

Features

•Low R

DS (on)

HDMOS

TM

process

•Rugged polysilicon gate cell structure

•International standard package

JEDEC TO-247 AD

•Fast switching times

•High commutating dv/dt rating

Applications

•Motor controls

•DC choppers

•Switched-mode and resonant-mode

power supplies

•Uninterruptible Power Supplies (UPS)

Advantages

•Easy to mount with one screw

(isolated mounting screw hole)

•Space savings

•High power density

DS99010(03/03)

Standard

Power MOSFET

N-Channel Enhancement Mode

Symbol Test conditions Maximum ratings

V

DSS

T

J

= 25°C to 150°C 250 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1.0 MΩ 250 V

V

GS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C MOSFET chip capability 60 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

240 A

I

AR

60 A

E

AR

T

C

= 25°C50mJ

E

AS

T

C

= 25°C 1.5 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

5 V/ns

T

J

≤ 150°C, R

G

= 2 Ω

P

D

T

C

= 25°C 400 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque 1.13/10 Nm/lb.in.

Weight TO-264 6 g

TO-247 AD

G = Gate D = Drain

S = Source Tab = Drain

IXTH 60N25 V

DSS

= 250 V

I

D(cont)

= 60 A

R

DS(on)

= 46m

ΩΩ

Ω

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300 °C

G

D

S

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

Symbol Test Conditions Characteristic values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

g

fs

V

DS

= 10 V; I

D

= 0.5 I

D25

, pulse test 28 36 S

C

iss

4400 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 800 pF

C

rss

290 pF

t

d(on)

23 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

23 ns

t

d(off)

R

G

= 2.0 Ω (External) 60 ns

t

f

17 ns

Q

g(on)

164 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

30 nC

Q

gd

85 nC

R

thJC

0.31 K/W

R

thCK

0.25 K/W

Source-Drain Diode Ratings and Characteristics

(T

J

= 25°C unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0V 60 A

I

SM

Repetitive; pulse width limited by T

JM

240 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= 25A, -di/dt = 100 A/µs, V

R

= 100V 300 ns

Q

rr

3.0 µC

IXTH 60N25

TO-247 AD Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

1 2 3

IXTH 60N25

Fig. 2. Extended Output Characteristics

@ 25 deg. C

0

25

50

75

10 0

12 5

15 0

0246 810

V

DS

- Volts

I

D

- Amperes

V

GS

= 1 0V

9V

8V

5V

6V

7V

Fig. 3. Output Characteristics

@ 125 Deg. C

0

10

20

30

40

50

60

0 1234567

V

DS

- Volts

I

D

- Amperes

V

GS

= 1 0V

9V

8V

7V

5V

6V

Fig. 1. Output Characteristics

@ 25 Deg. C

0

10

20

30

40

50

60

0 0.5 1 1.5 2 2.5 3 3.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 1 0V

9V

8V

7V

5V

6V

Fig. 4. R

DS(on)

Normalized to I

D25

Value vs.

Junction Temperature

0.5

1

1. 5

2

2.5

3

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalize

d

I

D

= 60A

I

D

= 30A

V

GS

= 1 0V

Fig. 6. Drain Current vs. Case

T emperature

0

10

20

30

40

50

60

70

-50 -25 0 25 50 75 100 125 150

T

C

- Degr ees Centigr ade

I

D

- Amperes

Fig. 5. R

DS(on)

Normalized to I

D25

Value vs. I

D

0.6

1

1. 4

1. 8

2.2

2.6

3

3.4

0306090120150

I

D

- Amperes

R

DS(on)

- Normalize

d

T

J

= 1 25ºC

T

J

= 25ºC

V

GS

= 1 0V

IXTH60N25

IXTH60N25

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