IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH 60N25
Fig. 11. Capacitance
10 0
10 0 0
10 0 0 0
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - p
C
iss
C
oss
C
rss
f = 1 MHz
Fig. 10. Gate Charge
0
2
4
6
8
10
0 306090120150180
Q
G
- nanoCoulombs
V
GS
- Volts
V
DS
= 1 25V
I
D
=30A
I
G
= 1 0mA
Fig. 7. Input Admittance
0
20
40
60
80
10 0
12 0
4 4.5 5 5.5 6 6.5 7 7.5 8
V
GS
- Volts
I
D
- Amperes
T
J
= -40ºC
25ºC
1 25ºC
Fig. 12. Maximum T ransient T hermal
Resistance
0.01
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
(th)JC
-
(ºC/W)
Fig. 8. T ransconductance
0
15
30
45
60
75
0 30 60 90 120 150 180
I
D
- Amperes
G
fs
- Siemens
T
J
= -40ºC
25ºC
1 25ºC
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
30
60
90
12 0
15 0
18 0
0.4 0.6 0.8 1 1.2 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 1 25ºC
T
J
= 25ºC
