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STE110NS20FD Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 200 V
V
DGR
Drain-gate voltage (R
GS
= 20 kΩ) 200 V
V
GS
Gate- source voltage ±20 V
I
D
Drain current (continuos) at T
C
= 25°C 110 A
I
D
Drain current (continuos) at T
C
= 100°C 69 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 440 A
P
TOT
Total dissipation at T
C
= 25°C 500 W
Derating factor 4 W/°C
dv/dt
(2)
2. I
SD
<110A, di/dt < 200A/µs, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 25 V/ns
V
ISO
Insulation winthstand voltage (AC-RMS) 2500 V
T
stg
Storage temperature –65 to 150 °C
T
j
Max. operating junction temperature 150 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case Max 0.25 °C/W
Rthj-amb Thermal resistance junction-ambient Max 30 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche data
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
110 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50V)
750 mJ
