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STE110NS20FD

P1-P3P4-P6P7-P9P10-P12
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Electrical characteristics STE110NS20FD
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test condictions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250µA, V
GS
= 0 200 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, @125°C
10
100
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ± 20V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 50A 0.022 0.024 Ω
Table 5. Dynamic
Symbol Parameter Test condictions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
V
DS
> I
D(on)
x R
DS(on)max
,
I
D
= 50A
30 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
7900
1500
460
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 100V, I
D
= 100A,
V
GS
= 10V
(see Figure 13)
360
35
135
504 nC
nC
nC
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STE110NS20FD Electrical characteristics
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Table 6. Switching times
Symbol Parameter Test condictions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 100V, I
D
= 50A
R
G
= 4.7Ω V
GS
= 10V
(see Figure 12)
40
130
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage rise time
Fall time
Cross-over time
V
DD
= 100V, I
D
= 100A,
R
G
= 4.7Ω, V
GS
= 10V
(see Figure 12)
245
140
220
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test condictions Min Typ. Max Unit
I
SD
Source-drain current 110 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 440 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 100A, V
GS
= 0
1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=100A, Tj=150°C
di/dt = 100A/µs,
V
DD
=160V, (see Figure 17)
225
1.35
12
ns
µC
A
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Electrical characteristics STE110NS20FD
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12

STE110NS20FD

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Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 200V 110A ISOTOP
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New from this manufacturer.
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