Characteristics STPS20200C
2/15 DocID024382 Rev 2
1 Characteristics
General formula to calculate T
J
(diode1) and T
J
(diode2):
T
j
(diode1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th(c)
+ T
case
T
j
(diode2) = P(diode2) x R
th(j-c)
(per diode) + P(diode1) x R
th(c)
+ T
case
Table 2. Absolute ratings (limiting values, per diode, unless otherwise stated)
Symbol Parameter Value
Uni
t
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current, δ = 0.5,
square wave
TO-220AB, D
2
PAK,
TO 220AB narrow leads
T
c
= 160 °C Per device 20 A
TO-220FPAB T
c
= 105 °C Per device 20 A
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms sinusoidal, T
amb
= 25 °C 180 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Operating junction temperature range
(1)
-40 to +175 °C
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
D
2
PAK, TO-220AB,TO-220AB narrow leads
Per diode
Per device
1.30
0.75
°C/W
TO-220FPAB
Per diode
Per device
5.00
4.15
R
th(c)
Coupling
D
2
PAK, TO-220AB, TO-220AB narrow leads 0.20
TO-220FPAB 3.30
dPtot
dTj
------- --------
1
Rth j a–()
----------- ---------------
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