Characteristics STPS20200C
4/15 DocID024382 Rev 2
Figure 1. Average forward power dissipation
versus average forward current (per diode)
Figure 2. Forward voltage drop versus forward
current (per diode)
P (W)
F(AV)
0
1
2
3
4
5
6
7
8
9
10
0123456789101112
T
δ
=tp/T
tp
δ = 1
δ = 0.1
δ = 0.05
δ = 0.5
δ = 0.2
I (A)
F(AV)
I
FM
(A)
0.1
1.0
10.0
100.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
(Maximum values)
(Typical values)
(Maximum values)
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
(Typical values)
V
FM
(V)
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 4. Junction capacitance versus reverse
voltage applied (typical values, per diode)
I (mA)
R
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0 20 40 60 80 100 120 140 160 180 200
T
j
=150°C
T
j
=125°C
T
j
=25°C
T
j
=100°C
T
j
=50°C
T
j
=75°C
V (V)
R
C(pF)
10
100
1000
1 10 100 1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V(V)
R
Figure 5. Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 6. Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAB)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
TO-220AB / TO-220AB narrow leads / D²PAK
t (s)
p
T
δ
=tp/T
tp
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Single pulse
t (s)
p
T
δ
=tp/T
tp
