VN5770AK-E Absolute maximum ratings
Doc ID 13228 Rev 6 7/34
2 Absolute maximum ratings
Stressing the device above the rating listed in Tabl e 3 and Ta bl e 4 may cause permanent
damage to the device. These are stress ratings only and operation of the device at these or
any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to the conditions in Section 2.1: Absolute maximum ratings for
extended periods may affect device reliability.
2.1 Absolute maximum ratings
Table 3. Dual high-side switch
Symbol Parameter Value Unit
V
CC
DC supply voltage 41 V
-V
CC
Reverse DC supply voltage 0.3 V
-I
GND
DC reverse ground pin current 200 mA
I
OUT
DC output current Internally limited A
-I
OUT
Reverse DC output current -12 A
I
IN
DC input current -1 to 10 mA
I
CSD
DC current sense disable input current -1 to 10 mA
V
CSENSE
Current sense maximum voltage
V
CC
-41
+V
CC
V
V
E
MAX
Maximum switching energy (single pulse)
(L = 3.7mH; R
L
=0:; V
bat
= 13.5V; T
jstart
= 150ºC;
I
OUT
=I
limL
(Typ.))
32 mJ
V
ESD
Electrostatic Discharge (Human Body Model: R = 1.5K:
C = 100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- V
CC
4000
2000
5000
5000
V
V
V
V
V
ESD
Charge device model (CDM-AEC-Q100-011) 750 V
T
j
Junction operating temperature -40 to 150 °C
T
stg
Storage temperature -55 to 150 °C
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Absolute maximum ratings VN5770AK-E
8/34 Doc ID 13228 Rev 6
Table 4. Low-side switch
Symbol Parameter Value Unit
V
DSn
Drain-source voltage (V
INn
= 0V) Internally clamped V
V
INn
Input voltage Internally clamped V
I
INn
Input current +/-20 mA
R
IN MINn
Minimum input series impedance 220 :
I
Dn
Drain current Internally limited A
I
Rn
Reverse DC output current -12 A
V
ESD1
Electrostatic discharge (R = 1.5K:, C = 100pF) 4000 V
V
ESD2
Electrostatic discharge on output pins only
(R = 330:, C = 150pF)
16500 V
P
tot
Total dissipation at T
c
= 25°C 4 W
T
j
Operating junction temperature Internally limited °C
T
c
Case operating temperature Internally limited °C
T
stg
Storage temperature -55 to 150 °C
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VN5770AK-E Electrical characteristics
Doc ID 13228 Rev 6 9/34
3 Electrical characteristics
3.1 Electrical characteristics for dual high-side switch
Values specified in this section are for 8V < V
CC
< 36V; -40°C < T
j
< 150°C, unless
otherwise specified (for each channel).
Table 5. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply
voltage
4.5 13 36 V
V
USD
Undervoltage shutdown 3.5 4.5 V
V
USDhyst
Undervoltage shutdown
hysteresis
0.5 V
R
ON
On state resistance
I
OUT
=3A; T
j
=25°C 160 m:
I
OUT
=3A; T
j
= 150°C 320 m:
I
OUT
=3A; V
CC
=5V; T
j
= 25°C 210 m:
V
clamp
Clamp voltage I
S
= 20 mA 41 46 52 V
I
S
Supply current
Off State; V
CC
= 13V; T
j
=25°C;
V
IN
=V
OUT
=V
SENSE
=0V
2
(1)
1. PowerMOS leakage included
5
(1)
PA
On State; V
CC
= 13V; V
IN
=5V;
I
OUT
=0A
36mA
I
L(off)
Off state output
current
(2)
2. For each channel
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
= 25°C
03PA
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
= 125°C
05PA
V
F
Output - V
CC
diode
voltage
(2)
-I
OUT
=3A; T
j
= 150°C 0.7 V
Table 6. Switching (V
CC
= 13V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time R
L
=4.3: (see Figure 3)— 15 Ps
t
d(off)
Turn-off delay time R
L
=4.3: (see Figure 3)— 10 Ps
(dV
OUT
/dt)
on
Turn-on voltage slope R
L
=4.3: See Figure 15 —VPs
(dV
OUT
/dt)
off
Turn-off voltage slope R
L
=4.3: See Figure 17 —VPs
W
ON
Switching energy
losses during t
won
R
L
=4.3: (see Figure 3) 0.16 mJ
W
OFF
Switching energy
losses during t
woff
R
L
=4.3: (see Figure 3) 0.08 mJ
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VN5770AKTR-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IC MOTOR DRIVER PAR 28SO
Lifecycle:
New from this manufacturer.
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