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IRLML9301TRPBF

P1-P3P4-P6P7-P9P10-P10
02/09/12
IRLML9301TRPbF
HEXFET
®
Power MOSFET
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through
are on page 10
Micro3
TM
(SOT-23)
IRLML9301TRPbF
Features and Benefits
Features
Benefits
S
G
1
2
D3
Application(s)
• System/Load Switch
V
DS
-30 V
V
GS Max
± 20 V
R
DS(on) max
(@V
GS
= -10V)
64
m
Ω
R
DS(on) max
(@V
GS
= -4.5V)
103
m
Ω
Symbol
Parameter
Units
V
DS
Drain-Source Voltage
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
T
J,
T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θJA
Junction-to-Ambient
––– 100
R
θJA
Junction-to-Ambient (t<10s)
––– 99
°C/W
A
Max.
-3.6
-2.9
-55 to + 150
± 20
0.01
-30
1.3
0.8
-15
W
Low R
DS(on)
(
64m
Ω
)
Lower switching losses
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen
⇒
Environmentally friendly
MSL1, Consumer qualification Increased reliability
PD - 96310C
IRLML9301TRPbF
2 www.irf.com
G
D
S
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V
V
(BR)DSS
/
J
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C
––– 51 64
––– 82 103
V
GS(th)
Gate Threshold Voltage -1.3 ––– -2.4 V
I
DSS
––– ––– 1
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
R
G
Internal Gate Resistance ––– 12 –––
Ω
gfs Forward Transconductance 5.0 ––– ––– S
Q
g
Total Gate Charge ––– 4.8 –––
Q
gs
Gate-to-Source Charge ––– 1.2 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 2.5 –––
t
d(on)
Turn-On Delay Time ––– 9.6 –––
t
r
Rise Time ––– 19 –––
t
d(off)
Turn-Off Delay Time ––– 16 –––
t
f
Fall Time ––– 15 –––
C
iss
Input Capacitance ––– 388 –––
C
oss
Output Capacitance ––– 93 –––
C
rss
Reverse Transfer Capacitance ––– 65 –––
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 14 21 ns
Q
rr
Reverse Recovery Charge ––– 7.2 11 nC
––– –––
––– –––
pF
A
-1.3
-15
V
DD
=-15V
nA
nC
ns
V
DS
= V
GS
, I
D
= -10μA
V
DS
=-24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
R
DS(on)
V
GS
= -4.5V, I
D
=
-2.9A
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current μA
m
Ω
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -3.6A
MOSFET symbol
showing the
V
DS
=-15V
Conditions
V
GS
= -4.5V
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0KHz
R
G
= 6.8Ω
V
GS
= -4.5V
di/dt = 100A/μs
V
GS
= -20V
V
GS
= 20V
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
integral reverse
p-n junction diode.
V
DS
= -10V, I
D
=-3.6A
I
D
= -3.6A
I
D
= -1A
T
J
= 25°C, V
R
= -24V, I
F
=-1.3A
IRLML9301TRPbF
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.1
1.4
1.6
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= -3.6A
V
GS
= -10V
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
≤60μs PULSE WIDTH Tj = 25°C
-2.5V
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
≤60μs PULSE WIDTH Tj = 150°C
-2.5V
2.0 2.5 3.0 3.5 4.0 4.5 5.0
-V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= -15V
≤
60μs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P10

IRLML9301TRPBF

Mfr. #:
Buy IRLML9301TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT P-Ch -30V -3.6A 64mOhm
Lifecycle:
New from this manufacturer.
Delivery:
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