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IRLML9301TRPBF

P1-P3P4-P6P7-P9P10-P10
IRLML9301TRPbF
4 www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
-V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 KHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
024681012
Q
G
,
Total Gate Charge (nC)
0
2
4
6
8
10
12
14
-
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= -24V
V
DS
= -15V
VDS= -6V
I
D
= -3.6A
0.3 0.5 0.7 0.9 1.1
-V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
-
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
T
A
= 25°C
Tj = 150°C
Single Pulse
100μsec
1msec
10msec
IRLML9301TRPbF
www.irf.com 5
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
1000
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
25 50 75 100 125 150
T
A
, Ambient Temperature (°C)
0
0.6
1.2
1.8
2.4
3
3.6
4.2
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
V
DS
-V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
IRLML9301TRPbF
6 www.irf.com
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Gate Charge Waveform
0 5 10 15 20 25 30 35
-I
D
, Drain Current (A)
0
100
200
300
400
500
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
Vgs = -10V
Vgs = -4.5V
2 4 6 8 10 12 14 16 18 20
-V
GS,
Gate -to -Source Voltage (V)
20
60
100
140
180
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= -3.6A
T
J
= 25°C
T
J
= 125°C
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
1K
VCC
DUT
0
L
S
20K
S
P1-P3P4-P6P7-P9P10-P10

IRLML9301TRPBF

Mfr. #:
Buy IRLML9301TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT P-Ch -30V -3.6A 64mOhm
Lifecycle:
New from this manufacturer.
Delivery:
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