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SI4900DY-T1-E3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
Vishay Siliconix
Si4900DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.4
1
10
20
0.0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
(V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0246810
I
D
= 4.3 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (mΩ)
0
15
25
5
10
Power (W)
Time (s)
20
1 10000.10.01 10 100
Safe Operating Area
100
1
0.1 1 10 100
0.001
10
T
A
= 25 °C
Single Pulse
- Drain Current (A)I
D
0.1
R
DS(on)*
Limited by
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
0.01
1 ms
10 ms
100 ms
DC
100 µs
1 s
10 s
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
www.vishay.com
5
Vishay Siliconix
Si4900DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
Single Pulse Avalanche Capability
0
1
2
3
4
5
6
25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
1
100
10
T
A
- Time In Avalanche (s)
0.0010.00010.000010.000001
I
C
- Peak Avalanche Current (A)
Power Derating
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
Vishay Siliconix
Si4900DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73272
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P9

SI4900DY-T1-E3

Mfr. #:
Buy SI4900DY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 5.3A 3.1W
Lifecycle:
New from this manufacturer.
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