IRG4P254S
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 200 300 I
C
=55A
Q
ge
Gate - Emitter Charge (turn-on) — 29 44 nC V
CC
= 200V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) — 66 99 V
GE
= 15V
t
d(on)
Turn-On Delay Time — 40 —
t
r
Rise Time — 44 — T
J
= 25°C
t
d(off)
Turn-Off Delay Time — 270 400 I
C
= 55A, V
CC
= 200V
t
f
Fall Time — 510 760 V
GE
= 15V, R
G
= 5.0Ω
E
on
Turn-On Switching Loss — 0.38 — Energy losses include "tail"
E
off
Turn-Off Switching Loss — 3.50 — mJ See Fig. 9, 10, 14
E
ts
Total Switching Loss — 3.88 5.3
t
d(on)
Turn-On Delay Time — 38 — T
J
= 150°C,
t
r
Rise Time — 45 — I
C
= 55A, V
CC
= 200V
t
d(off)
Turn-Off Delay Time — 400 — V
GE
= 15V, R
G
= 5.0Ω
t
f
Fall Time — 940 — Energy losses include "tail"
E
ts
Total Switching Loss — 6.52 — mJ See Fig. 11, 14
L
E
Internal Emitter Inductance — 13 — nH Measured 5mm from package
C
ies
Input Capacitance — 4500 — V
GE
= 0V
C
oes
Output Capacitance — 510 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 100 —ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 250 —— VV
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 —— VV
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 0.33 — V/°CV
GE
= 0V, I
C
= 1.0mA
— 1.32 1.5 I
C
= 55A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage — 1.69 — I
C
=98A See Fig.2, 5
— 1.31 — I
C
=55A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -12 — mV/°CV
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance U 43 63 — SV
CE
= 100V, I
C
= 55A
——250 V
GE
= 0V, V
CE
= 250V
——2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
——1000 V
GE
= 0V, V
CE
= 250V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
Notes:
Q Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
