IRG4P254S

P1-P3 P4-P6 P7-P9

IRG4P254S

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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

25 50 75 100 125 150

0

20

40

60

80

100

T , Case Temperature ( C)

Maximum DC Collector Current(A)

C

°

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Dut

y

factor D =t / t

2. Peak T =P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

-60 -40 -20 0 20 40 60 80 100 120 140 160

1.0

2.0

3.0

T , Junction Temperature ( C)

V , Collector-to-Emitter Voltage(V)

J

°

CE

V = 15V

80 us PULSE WIDTH

GE

I = A27.5

C

I = A55

C

I = A110

C

CURRENT LIMITED BY THE PACKAGE

IRG4P254S

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Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

R

G

, Gate Resistance ( Ω )

1 10 100

0

2000

4000

6000

8000

V , Collector-to-Emitter Volta

g

e (V)

C, Capacitance (pF)

CE

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C SHORTED

GE

ies

g

e

g

c , ce

res

g

c

oes ce

g

c

C

ies

C

oes

C

res

0 40 80 120 160 200

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Emitter Voltage (V)

G

GE

V = 200V

I = 55A

CC

C

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.1

1

10

100

T , Junction Temperature ( C )

Total Switching Losses (mJ)

J

°

R = 5Ohm

V = 15V

V = 200V

G

GE

CC

I = A

110

C

I = A

55

C

I = A

27.5

C

0 10 20 30 40 50

3.0

4.0

5.0

R , Gate Resistance (Ohm)

Total Switching Losses (mJ)

G

V = 200V

V = 15V

T = 25 C

I = 55A

CC

GE

J

C

°

R

G

, Gate Resistance ( Ω )

5.0Ω

IRG4P254S

6 www.irf.com

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

Fig. 12 - Turn-Off SOA

0 20 40 60 80 100 120

0

5

10

15

20

I , Collector-to-emitter Current (A)

Total Switching Losses (mJ)

C

R = 5Ohm

T = 150 C

V = 200V

V = 15V

G

J

CC

GE

°

5.0Ω

10

100

1000

1 10 100 1000

V = 20V

T = 125 C

GE

J

o

V , Collector-to-Emitter Volta

g

e (V)

I , Collector-to-Emitter Current (A)

CE

C

SAFE OPERATING AREA

P1-P3 P4-P6 P7-P9

IRG4P254S

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

IGBT 250V 98A 200W TO247AC

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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IRG4P254S