IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 40N60B2
IXGR 40N60B2D1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
I
C
= 30 A; V
CE
= 10 V, 20 36 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
2560 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 210 pF
C
res
54 pF
Q
g
100 nC
Q
ge
I
C
= 30 A, V
GE
= 15 V, V
CE
= 300 V 15 nC
Q
gc
36 nC
t
d(on)
18 ns
t
ri
20 ns
t
d(off)
130 200 ns
t
fi
82 150 ns
E
off
0.4 0.8 mJ
t
d(on)
18 ns
t
ri
20 ns
E
on
0.3 mJ
t
d(off)
240 ns
t
fi
150 ns
E
off
1.10 mJ
R
thJC
0.75 K/W
R
thCK
0.15 K/W
Inductive load, T
J
= 25
°°
°°
°C
I
C
= 30 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 3.3 Ω
Inductive load, T
J
= 125
°°
°°
°C
I
C
= 30 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 3.3 Ω
Reverse Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
F
= 30 A, V
GE
= 0 V, Pulse test T
J
=150°C 1.6 V
t ≤ 300 µs, duty cycle d ≤ 2 % 2.5 V
I
RM
I
F
= 30 A, V
GE
= 0 V, -di
F
/dt =100 A/µs, T
J
= 100°C4A
t
rr
V
R
= 100 V T
J
= 100°C 100 ns
I
F
= 1 A; -di/dt = 100 A/µs; V
R
= 30 V 25 ns
R
thJC
0.9 1.1 K/W
ISOPLUS 247 Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
