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IXGR40N60B2

P1-P3P4-P6
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 40N60B2
IXGR 40N60B2D1
Fig. 7. Transconductance
0
10
20
30
40
50
60
0 30 60 90 120 150 180
I
C
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Dependence of Turn-Off
Ene r gy o n R
G
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3 6 9 12151821242730
R
G
- Ohms
E
off
- milliJoules
I
C
= 15A
T
J
= 125ºC
V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 60A
Fig. 9. Dependence of Turn-Off
En e r g y
on I
c
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
R
G
= 3.3Ω
V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Dependence of Turn-Off
Energy on Temperature
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- milliJoules
I
C
= 60A
R
G
= 3.3Ω
V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 15A
Fig. 11. Dependence of Turn-Off
Switching Time on R
G
100
150
200
250
300
350
400
450
500
550
600
3 6 9 12151821242730
R
G
- Ohms
Switching Time - nanosecond
I
C
= 30A
t
d(off)
t
fi
-
- - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 400V
I
C
= 15A
I
C
= 60A
Fig. 12. Dependence of Turn-Off
Switching Time
on I
c
75
100
125
150
175
200
225
250
275
300
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
Switching Time - nanosecond
t
d(off)
t
fi
- - - - - -
R
G
= 3.3Ω
V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
© 2004 IXYS All rights reserved
IXGR 40N60B2
IXGR 40N60B2D1
Fig. 14. Gate Charge
0
3
6
9
12
15
0 102030405060708090100
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 300V
I
C
= 30A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-Off
Switching Time on Temperature
75
100
125
150
175
200
225
250
275
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanosecond
t
d(off)
t
fi
-
- - - - -
R
G
= 3.3Ω
V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 60A
I
C
= 15A
Fig. 13. Maximum Transient Thermal Resistance
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 40N60B2
IXGR 40N60B2D1
200 600 10000 400 800
60
70
80
90
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
10
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°C
-di
F
/dt
t
s
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
V
FR
di
F
/dt
V
200 600 10000 400 800
0
5
10
15
20
25
30
100 1000
0
200
400
600
800
1000
0123
0
10
20
30
40
50
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/µs
A
V
nC
A/µs
A/µs
t
rr
ns
t
fr
Z
thJC
A/µs
µs
DSEP 2x31-06B
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
I
F
= 30A
Fig. 19 Peak reverse current I
RM
versus -di
F
/dt
Fig. 18 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 17 Forward current I
F
versus V
F
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig. 20 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 21 Recovery time t
rr
versus -di
F
/dt Fig. 22 Peak forward voltage V
FR
and
t
fr
versus di
F
/dt
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Fig. 23 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.436 0.0055
2 0.482 0.0092
3 0.117 0.0007
4 0.115 0.0418
906
T
VJ
=25°C
T
VJ
=100°C
T
VJ
=150°C
P1-P3P4-P6

IXGR40N60B2

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IGBT 600V 60A 167W ISOPLUS247
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