BC817-16LT1G

BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
www.onsemi.com
4
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L
I
B
, BASE CURRENT (mA)
Figure 5. Saturation Region
100
10
1
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
0.1 1
1 10 100 1000
-2
-1
0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
10 100
T
J
= 25°C
I
C
= 10 mA
q
VC
for V
CE(sat)
q
VB
for V
BE
C
ob
C
ib
100 mA 300 mA 500 mA
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
www.onsemi.com
5
TYPICAL CHARACTERISTICS − BC817−25L, SBC817−25L
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
500
10.10.010.001
0.01
0.1
1
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1
V
CE
= 1 V
150°C
−55°C
25°C
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.7
1.1
V
CE
= 5 V
150°C
−55°C
25°C
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
I
C
, COLLECTOR CURRENT (mA)
10001010.1
10
100
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
1000
100
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
www.onsemi.com
6
TYPICAL CHARACTERISTICS − BC817−25L, SBC81725L
I
B
, BASE CURRENT (mA)
Figure 13. Saturation Region
100
10
1
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 14. Temperature Coefficients
+1
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Capacitances
0.1 1
1 10 100 1000
-2
-1
0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
10 100
T
J
= 25°C
I
C
= 10 mA
q
VC
for V
CE(sat)
q
VB
for V
BE
C
ob
C
ib
100 mA 300 mA 500 mA

BC817-16LT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 50V NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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