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SI1414DH-T1-GE3

P1-P3P4-P6P7-P9P10-P12
Si1414DH
www.vishay.com
Vishay Siliconix
S14-1224-Rev. C, 16-Jun-14
4
Document Number: 67073
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 μA
V
GS(th)
(V)
T
J
- Temperature (°C)
0
0.02
0.04
0.06
0.08
0.10
012345
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
=25 °C
T
J
= 125 °C
I
D
=4A
0
5
10
15
20
25
30
Power (W)
Time (s)
10 10000.10.010.001 1001
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
100
1
0.1 1 10 100
0.01
10
0.1
T
A
=25 °C
Single Pulse
1 s,10s
Limited by R
DS(on)
*
BVDSS Limited
1ms
100 μs
10 ms
DC
100 ms
Si1414DH
www.vishay.com
Vishay Siliconix
S14-1224-Rev. C, 16-Jun-14
5
Document Number: 67073
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating* Power Derating
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
0
2
4
6
8
Package Limited
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
F
- Foot Temperature (°C)
Power Dissipation (W)
Si1414DH
www.vishay.com
Vishay Siliconix
S14-1224-Rev. C, 16-Jun-14
6
Document Number: 67073
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67073.
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA
= 125 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Single Pulse
0.02
0.05
0.2
Duty Cycle = 0.5
10
-3
10
-2
01110
-1
10
-4
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.2
0.1
Duty Cycle = 0.5
0.05
Single Pulse
0.02
P1-P3P4-P6P7-P9P10-P12

SI1414DH-T1-GE3

Mfr. #:
Buy SI1414DH-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SI1416EDH-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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